IQE022N06LM5CG

综述

OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package

IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the new PQFN 3.3x3.3 Center-Gate package, IQE022N06LM5CG is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

特征描述

  • Logic level allows lower Qrr and QOSS, and easier gate driver selection
  • Reduced RDS(on) by up to 30% compared to current technology
  • Improved RthJC over current PQFN package technology
  • Center-Gate package specifically optimized for parallelization

优势

  • Enabling highest power density and performance
  • Superior thermal performance
  • Optimized layout possibilities for efficient use of real-estate
  • Simplifying parallel configuration of multiple MOSFETs

潜在应用

支持