IQDH88N06LM5

综述

OptiMOS™ power MOSFETs 60 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).

The power MOSFET IQDH88N06LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,86 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a lot of end applications like class-D audio, high-power chargers, SMPS, telecom, and intermediate bus conversion in high-performance computing, like hyper-scale datacenters and AI-server farms.

特征描述

  • Cutting edge 60 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Standard-Gate footprint

优势

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package

潜在应用

支持