IQDH45N04LM6CG

综述

OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on)

The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(ON) of 0.45 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like battery-powered tools, SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.

特征描述

  • Cutting edge silicon technology OptiMOS™ 40 V with outstanding FOMs
  • Source-Down package with improved thermal performance and ultra-low parasitics
  • Source-Down package with maximized chip/package ratio
  • Source-Down package in Center-Gate footprint

优势

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Center-Gate footprint enables optimized parallelization
  • Lowest possible RDS(on) on 5x6 mm² PCB real-estate
  • Improved thermal performance for easy thermal management
  • Lowest package parasitics for best switching performance
  • industry standard package

潜在应用

Complimentary products

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