IQD063N15NM5CGSC
综述
OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)
The power MOSFET IQD063N15NM5CGSC comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package.
This enables higher system efficiency and power density for a large variety of end applications.
特征描述
- Cutting edge 150 V silicon technology
- Outstanding FOMs
- Improved thermal performance
- Ultra-low parasitics
- Maximized chip/package ratio
- Center-Gate footprint
- Industry-standard package
优势
- Best switching performance
- Minimized conduction losses
- Fast switching
- Reduced voltage overshoot
- Increased maximum current capability
- Less device paralleling required
- Lowest RDS(on) on a 5x6 footprint
- Easy thermal management
支持