IQD009N06NM5CGSC

综述

OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)

The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package.

This enables higher system efficiency and power density for a large variety of end applications.

特征描述

  • Cutting edge 60 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio
  • Center-Gate footprint
  • Industry-standard package

优势

  • Best switching performance
  • Minimized conduction losses
  • Fast switching
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Easy thermal management
支持