IPTC068N20NM6
综述
OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package
IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products.
OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology.
特征描述
- Industries lowest RDS(on) in 200 V
- Industries lowest Qrr in 200 V
- Compared to previous 200 V technology
- Up to 42% lower RDS(on)
- Up to 89% lower Qrr(typ)
- 36% lower FOMg
- More than 3 times softer diode
- Improved capacitance linearity
- Improved SOA
- Tight Vgs(th) spread of +/- 750 mV
- High avalanche ruggedness
- Max Tj of 175°C and MSL1
优势
- Low conduction and switching losses
- Stable operation with improved EMI
- Better current sharing when paralleling
- Enhanced robustness
- Improved system reliability
支持
