IPP089N15NM6
综述
OptiMOS™ 6 power MOSFET 150 V normal level in TO-220 package
IPP089N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy StrongIRFET™ and OptiMOS™ 3 150 V products.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
特征描述
- 20% lower FOMg than OptiMOS™ 5
- Industry's lowest Qrr in 150 V
- Improved diode softness vs OptiMOS™ 5
- Tight Vgs(th) spread of +/-500 mV
- High avalanche ruggedness
- Through-hole package
- Max Tj of 175°C
优势
- Low conduction and switching losses
- Stable operation with improved EMI
- Better current sharing when paralleling
- Enhanced robustness
- Flexible mechanical assembly
- Improved system reliability
支持
