IPF019N12NM6

综述

Fully optimized best-in-class performance at 120 V

This is a normal level 120 V MOSFET in D²PAK-7 pin package with 1.9 mOhm on-resistance.  IPF019N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.

特征描述

Compared to OptiMOS™ 3, the technology features:

  • up to 58% better RDS(on)
  • up to 66% better FOMg
  • up to 90% better Qrr
  • up to 35% better FOMoss

Compared to the next best alternative, the technology features:

  • up to 51% better RDS(on)
  • up to 35% better FOMg
  • up to 6% better Qrr
  • up to 45% better FOMoss

优势

  • Very low on-resistance
  • Very low reverse recovery charge
  • Excellent gate charge x RDS(on)
  • High avalanche energy rating
  • 175°C junction temperature rating
  • Pb-free plating
  • RoHS compliant
  • Halogen-free
  • MSL1 classified

潜在应用

支持