IPB029N15NM6
综述
OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package
IPB029N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.
OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
特征描述
- 40% lower RDS(on) than OptiMOS™ 5
- Industry's lowest Qrr in 150 V
- Improved diode softness vs OptiMOS™ 5
- Tight Vgs(th) spread of +/-500 mV
- High avalanche ruggedness
- Max Tj of 175°C and MSL1
优势
- Low conduction and switching losses
- Stable operation with improved EMI
- Better current sharing when paralleling
- Enhanced robustness
- Improved system reliability
支持