IPP60R360CFD7

综述

600V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode in TO-220 package is the perfect choice for resonant high power topologies

Infineon’s CoolMOS™ CFD7 superjunction MOSFET IPP60R360CFD7 in 600V is ideally suited for resonant topologies in high-power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ high-voltage power MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69 percent reduced reverse recovery charge compared to competitors.

特征描述

  • Ultrafast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

优势

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

潜在应用

Server, Telecom, EV-charging, SMPS, PC power

视频
Infineon banner on demand webminars
www.infineon.com/coolmos" request-properties="true"> Share
Share
培训

Si, SiC or GaN? The right choice for power devices

Infineon on demand webinar Si, SiC or GaN?

Watch our webinar to discover more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.

600V CoolMOS™ CFD7产品

Si | SiC | GaN Positioning in ACDC applications

Infineon webminar Si-Sic-Gan positioning photo

Infineon offers trusted expertise in all 3 main power semiconductor technologies. Check out how to position them in ACDC applications!

支持