650 V CoolMOS™ 8
The high voltage super-junction MOSFET family combines the best of 650 V CoolMOS™ 7 technologies
The 650 V CoolMOS™ 8 is Infineon’s latest high voltage super-junction MOSFET technology. It comes with integrated fast body diode targeting a broad variety of applications.
It focuses on high power applications, such as server, telecom, solid state circuit breakers, solid state relays and EV charging stations.
650 V CoolMOS™ 8 comes with an efficiency improvement over its predecessor. Also, it enhances the 600 V CoolMOS™ 8 portfolio. 650 V and 600 V CoolMOS™ 8 have a similar performance in high line as well as low line. Full load performance difference between 600 V and 650 V mainly coming from conduction losses driven by RDS(on).
Key features:
- Fits for hard & soft switching
- Lower switching & conduction losses
- Advanced interconnect technology
- Integrated fast body diode
- Best silicon RDS(on)*A technology
CoolMOS™ 8 offers highest efficiency and best-in-class (BiC) reliability in soft switching topologies such as PFC and LLC. Furthermore, it offers an outstanding level of performance in both PFC and LLC topologies.
In addition, CoolMOS™ 8 enables higher power density thanks to its optimized RDS(on) which allows us to bring our BiC product down to a single digit of 8 mOhm and enables cost attractive Si-based solutions, complementing our wide band gap (WBG) offerings.
- Server
- Telecom
- Super solid-state solutions (relays, circuit breakers)
- EV charging
- Solar & energy storage systems
- Industrial SMPS
