IPD90P03P4L-04
综述
特征描述
- P 通道 - 正常电平 - 增强模式
- AEC 认证
- MSL1 峰值回流温度高达 260°C
- 175°C 的工作温度
- 环保封装(符合 RoHS)
- 100% 经过雪崩测试
- 用于反向电池保护
优势
- 高边驱动无需电荷泵。
- 简单的接口驱动电路
- 30V 时, RDSon 为世界极低值
- 极高的冲击电流能力
- 极低的开关功耗和传导功率损耗,造就极高的热效率
- 稳固的封装,出色的品质,高可靠性
- 标准封装 TO-252、TO-263、TO-220、TO-262
潜在应用
- 用于电机桥的高边 MOSFET(半桥、H 桥、三相电机)
- 采用30V P 通道作为高边器件,无需电荷泵即可实现桥配置
视频
培训
- Be familiar with Infineon’s measures to reduce the failure rate and to prove the quality level of a product
- Identify the right product based on given target application requirements
- Get to know today`s fast growing automotive MOSFET market.
- Know more about Infineon`s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications.
- Learn how Infineon defines a true culture of quality.
- Get to know Infineon`s Zero Defect approach and how Infineon goes beyond the requiriments when it comes to automotive MOSFET qulification.
- Get to know Infineon’s Automotive MOSFET data sheet.
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities.
- Know the different 48 V applications for the new drivetrain architectures.
- Get an overview of Infineon`s comprehensive MOSFET portfolio.
- Have an overview of the converters needed in electric vehicles.
- Analyze the 2-quadrant converter topology in buck and boost mode and the half-bridge converter with center tap rectification topology.
- Recognize the different types of setups in the data sheets.
- Be able to calculate the junction-to-ambient thermal resistance value, the power losses, and the static DC current.
支持