IAUTN15S6N038G 150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLG (10x12), OptiMOS™ 6
综述
IAUTN15S6N038G is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLG 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
特征描述
- Breakdown voltage of 150V
- Low RDS(on) → lowest conduction losses
- N-ch.-Enhancement mode-Normal Level
- Tight distribution of VGS(th)
- 175°C operating temperature
- High avalanche capability
优势
- High power density
- By far industry’s lowest RDS(on)
- High ID for high-power applications
- High switching performance
潜在应用
支持
