600V CoolMOS™ S7A
出色的 RDS(on) * 适用于低频开关汽车应用的超结 MOSFET
汽车级 600 V CoolMOS™ S7A 超结 MOSFET 适用于配备低开关频率 MOSFET 的 xEV 应用，如高压电熔丝、高压电子断开装置以及位于 PFC 级低频开关支路的车载充电器。而创新型顶部冷却 (TSC) QDPAK 封装与 CoolMOS™ S7A MOSFET 出色的稳健性及性能相结合，即可满足此类应用对于高功率密度、安全性和可靠性的严苛要求。该新型 MOSFET 采用高成本效益设计，导通电阻 RDS(on) 低至 10 mOhm，兼顾高功率密度与低导通损耗，符合远超 AEC-Q101 标准的高水平汽车质量要求。
得益于其内置的开尔文源极设计、高耗散功率和创新冷却方案，顶部冷却型 QDPAK 封装在提高效率的同时，还可增强可控性。
CoolMOS™ S7A 产品系列基于对知名 CoolMOS™ 7 技术的成功工艺优化，摒弃了与开关性能相关但在低频开关应用中不需要的多余功能。因此，英飞凌这一新技术不仅能优化成本，亦可兼顾质量或性能，其设计旨在满足远超 AEC-Q101 标准的高水平汽车质量要求。
QDPAK 创新型顶部冷却技术采用 SMD 封装，可在大尺寸芯片中实现市场上的极低 RDS(on)。得益于其内置的第 4 引脚开尔文源极配置和低寄生源极电感，器件可显著降低开关损耗，同时增强可控性与易用性。产品所用冷却设计可实现电路板和半导体的热解耦，进而提高芯片温度，为系统设计人员提供较高的 PCB 设计灵活度。
| 关键特性 | 主要优势 |
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CoolMOS™ S7A 是适用于高压电子断开装置和高压电熔丝的半导体解决方案。该产品满足了电动汽车在可靠性（免维护）、灵活且高成本效益的系统集成、可扩展性和抑制故障传播方面的需求。
CoolMOS™ S7A 在车载充电器的 PFC 级上有着显著优势。通过将 ALR（有源线路整流）配置的二极管桥更换为 S7A，典型升压 PFC 拓扑的效率即可提高 0.5%，功率损耗则可降低 30%。
- Get to know Infineon’s Automotive MOSFET data sheet
- Improve your understanding of the parameters and diagrams in the document, which will help you better evaluate the device’s limits and capabilities
Are you looking for a power MOSFET alternative and want to see what Infineon can offer? It has never been easier.
- Know how a typical battery protection switch works and the importance of MOSFET avalanche robustness
- Identify the best-in-class Infineon offerings of demo boards, MOSFETs and gate drivers
- learnt about the transition from fule injection combustion engine to full battery electric vehicles and the main 48V powered applications
- Additionally get an overview about Infineon’s comprehensive MOSFET portfolio for 48 V applications and their support material
- Be familiar with top-side cooling, its uses and benefits
- Learn how you can get the most out of your TOLT package
This training explains the benefits of using the TOLG and the target industrial and automotive applications of this package. It also lists the current available portfolio and explains what you will gain by using the package.
- Know more about Infineon’s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications
- Understand why and how Infineon is strengthening its position in the 40 V MOSFET market, and be familiar with Infineon’s newest 60 V MOSFETs
- Get to know Infineon’s Zero Defect approach and how Infineon goes beyond the requirements when it comes to automotive MOSFET qualification
- Be familiar with both dimensions of Infineon’s Zero Defect approach, which aim at extending product lifetimes and reducing the number of random failures, by exploring each one in detail
