IPD22N08S2L-50

综述

特征描述

  • N 通道逻辑电平 - 增强模式
  • 通过汽车 AEC 101 认证
  • MSL1 峰值回流温度高达 260°C
  • 175°C 的工作温度
  • 环保封装（无铅）
  • 超低 Rds（on）
  • 100% 经过雪崩测试

优势

  • 75V 时， RDS (on)为世界极低值，采用平面工艺
  • 极高的冲击电流能力
  • 极低的开关功耗和传导功率损耗，造就极高的热效率
  • 稳固的封装，出色的品质，高可靠性
  • 优化极栅电荷总量，实现更小的驱动器输出级

潜在应用

  • 气门控制
  • 电磁阀控制
  • 照明
  • 单端电机

仿真/ SPICE-型号

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培训

Getting started with automotive MOSFETs

Gettings tarted with mosfets
  • Know more about Infineon’s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications
  • Understand why and how Infineon is strengthening its position in the 40 V MOSFET market, and be familiar with Infineon’s newest 60 V MOSFETs

Going above and beyond. How Infineon produces the highest quality automotive MOSFETs

Goingaboveandbeyond
  • Get to know Infineon’s Zero Defect approach and how Infineon goes beyond the requirements when it comes to automotive MOSFET qualification
  • Be familiar with both dimensions of Infineon’s Zero Defect approach, which aim at extending product lifetimes and reducing the number of random failures, by exploring each one in detail
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