AUIRFS3206

综述

专为汽车应用而设计，该 HEXFET® 功率 MOSFET 采用最新的处理技术，可实现每硅片面积极低的导通电阻。该设计的其他特点是 175°C 结的工作温度、快速的开关速度和改进的重复雪崩额定值。这些特性相结合，使该设计成为一种极其高效和可靠的设备，可用于汽车应用和各种其他应用。

优势

  • 先进加工技术
  • 超低导通电阻
  • 增强的 dV/dT 和 dI/dT 能力
  • 175°C 的工作温度
  • 快速开关
  • 允许重复雪崩达到 Tjmax
  • 无铅，符合 RoHS
  • 通过汽车认证
培训

Getting started with automotive MOSFETs

Gettings tarted with mosfets
  • Know more about Infineon’s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications
  • Understand why and how Infineon is strengthening its position in the 40 V MOSFET market, and be familiar with Infineon’s newest 60 V MOSFETs

Going above and beyond. How Infineon produces the highest quality automotive MOSFETs

Goingaboveandbeyond
  • Get to know Infineon’s Zero Defect approach and how Infineon goes beyond the requirements when it comes to automotive MOSFET qualification
  • Be familiar with both dimensions of Infineon’s Zero Defect approach, which aim at extending product lifetimes and reducing the number of random failures, by exploring each one in detail
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