AUIRF2805S

综述

HEXFET® Power MOSFET经过专门设计，适用于汽车应用，采用新型工艺技术，每个硅片都可以实现极低的导通电阻。另外，这种设计还可以在175°C的结温下工作，切换速度快，改善了重复性雪崩的额定值。上述功能的结合使得这种装置极为有效和可靠，广泛适用于汽车行业和其它各种应用。

优势

  • 先进加工技术
  • 超低导通电阻
  • 动态的dv/dt额定值
  • 175°C 的工作温度
  • 快速开关
  • 完全雪崩额定值
  • 允许重复雪崩达到 Tjmax
  • 无铅，符合 RoHS
  • 通过汽车认证
培训

Getting started with automotive MOSFETs

Gettings tarted with mosfets
  • Know more about Infineon’s wide MOSFET selection for 48 V mild-hybrid electric vehicle, or MHEV, applications
  • Understand why and how Infineon is strengthening its position in the 40 V MOSFET market, and be familiar with Infineon’s newest 60 V MOSFETs

Going above and beyond. How Infineon produces the highest quality automotive MOSFETs

Goingaboveandbeyond
  • Get to know Infineon’s Zero Defect approach and how Infineon goes beyond the requirements when it comes to automotive MOSFET qualification
  • Be familiar with both dimensions of Infineon’s Zero Defect approach, which aim at extending product lifetimes and reducing the number of random failures, by exploring each one in detail
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