IRF9362PBF-1

综述

优势

  • Optimized for broadest availability from distribution partners
  • Optimized for 10V gate-drive voltage(called Normal level), capable of being driven at 4.5V gate-drive voltage (called Logic level)
  • Reduced design complexity in high-side configuration (vs N-channel device)
  • Easier interface to Microcontroller (vs N-channel device)
  • Industry standard surface-mount package
  • Capable of being wave-soldered

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

优势

  • Optimized for broadest availability from distribution partners
  • Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
  • Reduced design complexity in high-side configuration (vs N-channel device)
  • Easier interface to Microcontroller (vs N-channel device)

 

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