Source-Down

综述

OptiMOS™ 源极底置功率 MOSFET 系列具有行业领先的 RDS(on) 和卓越的热性能

英飞凌的 OptiMOS™ 低压功率 MOSFET 通过源极底置技术展示了一种经过创新和改进的PQFN 封装概念。通过这种新封装，硅器件倒置在元件内部 。这样，源极电位即可通过导热垫（而非漏极电位）连接到 PCB。

25V 3.3x3.3mm是整个产品系列进入市场的第一款源极底置封装产品。从 25V 到 150V 的完整产品组合将在未来两年内全面发布。 这项新技术有两个不同的封装版本。源极底置版本和源极底置中心门极版本，后者专门针对并联应用进行了优化。与当前的解决方案相比，源极底置具有很多优势，例如更低的RDS（on）和更高的热性能。此外，通过源极底置技术可减少主动散热，并提供更有效的热管理布局。PQFN 3.3x3.3 源极底置封装的OptiMOS™低压功率MOSFET系列的目标应用包括驱动器，电信，SMPS和服务器。

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3D model innovative Source-Down package

Infineon photo of a 3D model Source DOwn PQFN
视频

48V HSC converter

21:17

Infineon recently introduced the new Open Compute Accelerator Module (OAM) as an intermediate bus converter, a Hybrid Switch Capacitor (HSC) converter. This converter combines the benefits of switched capacitor converters and the high step down ratio capability of a magnetic device.

Tackling the power density challenge OptiMOS™ Source-Down

9:54

Our expert gives an introduction to the new breakthrough in MOSFET packaging: Source-Down. The new package concept boosts power density in 48 V conversion. Thermals are under control and it stays cool demonstrated by the underwater setup.

Something huge is coming from #Infineon!

0:49

Infineon, the market leader in power semiconductor manufacturing, drives innovation in power management further. Ushers a new industry benchmark in MOSFET packaging that supports system-level optimization. Stay tuned!

Expert talk on the groundbreaking OptiMOS™ Source-Down package concept

4:09

Infineon, the industry leader in power systems again made a step forward in innovation for its customers’ even greater convenience. Listen to our experts discussing how our system-level understanding and innovative spirit helps us to supply the market with the right components.

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