Dual PQFN

综述

节省空间，大幅度减少损失，提高效率

单无引线 SMD 封装中的双 FET 功率级，将同步 DC-DC 转换器的低边和高边 MOSFET 集成到 5.0x6.0mm² 封装外形中。设计师的设计最高可以缩减 85%，利用这种新型封装替代两个分立封装，例如，SO8 或 SuperSO8。

封装内两个 MOSFET 的外形尺寸减小和互连，确保环路电感低，从而提高效率。借助新的 OptiMOS™ 技术，功率级 5x6 实现 93.5% 的峰值效率。功率级 5x6 可处理高达 30A 的应用电流。

Key features Key benefits Applications
  • Small package outline and low profile
  • Best-in-class on-state resistance
  • Internally connected low-side and high-side 
  • Larger exposed die-pad for the low-side MOSFET
  • Compact and simplified layout for a DC-DC converter
  • Highest efficiency 
  • Optimized layout with lowest loop inductivity
  • Otimized thermal design
  • Notebook core, peripheral
  • Motherboard core, peripheral
  • Netbook core
  • Server peripheral
  • Telecom
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Infineon's Power MOSFETs Power Block Versus Power Stage 5x6

This video covers a comparison between Infineon’s Power Block and power stage 5x6 packages. Two leadless SMD package comprising the low-side and high-side MOSFET of a synchronous DC/DC converter into a 5.0x6.0mm2 package outline.


Introduction to Power Block Product Family

Watch Full Product Overview

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