IRF40H210

综述

40V 单个 N 通道 HEXFET Power MOSFET, 采用PQFN 5 x 6 B/E 封装

优势

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10V gate-drive voltage (called Normal level)
  • Silicon optimized for applications switching below <100KHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
质量
支持