12V-300V N-通道功率MOSFET

综述

适用于低、中、高功率应用的低压 OptiMOS™ 和 StrongIRFET™ MOSFET

为提高效率、功率密度和成本效益，英飞凌研发了 OptiMOS™ N 沟道功率 MOSFET。该产品专为高性能应用而设计，针对高开关频率进行优化，其品质因数跻身业界前列。

此产品组合经 StrongIRFET™ 及 StrongIRFET™ 2 N 沟道 MOSFET 完善扩展后，竞争优势更为明显。在 OptiMOS™ MOSFET 的卓越技术基础上，StrongIRFET™ 及 StrongIRFET™ 2 MOSFET 又赋予其稳健设计与优异的性价比。二者均可满足严苛的质量与性能要求。

  • IR MOSFET™：100-300V
  • StrongIRFET™：20-300V
  • StrongIRFET™ 2：80-100V
  • OptiMOS™ 3：75V、120V、200-300V
  • OptiMOS™ 5：25-60V、80V、100V、150V
  • OptiMOS™ 6：40V

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此类 N 沟道功率 MOSFET 涵盖从低至高开关频率的全范围应用，是开关电源 (SMPS)、电池供电电机、电机控制和驱动、逆变器以及计算机等应用的理想之选。

这一包含 OptiMOS™ 与 StrongIRFET™ 解决方案的产品组合品类齐全，可缩减所有上述和类似应用中的器件尺寸，提高电流额定值并优化热性能。

OptiMOS™ 与 StrongIRFET™ 的 MOSFET 产品组合为设计人员提供多种电压额定值选择，从 12 伏 到 250 伏及 300 伏 的 MOSFET 均包括在内。此类低压 MOSFET 支持诸多紧凑型封装，可满足高载流应用的性能要求。

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最新功率MOSFET产品系列

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Choosing the right MOSFET can be challenging. Watch the webminar and learn how to make a safe choice when selecting a MOSFET for your design.

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