IM828-XCC
CIPOS™ Maxi 1200 V, 20 A三相智能功率模块
基于1200 V, 55 mΩ CoolSiC™ MOSFET技术的CIPOS™ Maxi 三相智能功率模块封装在DIP 36x23D封装中,三相桥低端开路,提供了全功能紧凑型变频解决方案,具有优良的导热性能,适用于工业应用中的工业驱动器、暖通空调、有源滤波器和电机控制等。
特征描述
- 采用1200 V CoolSiC™ MOSFET芯片
- 在10 KHz时,可提供超过4.8 kW的电机功率输出
- 高可靠的1200V 绝缘体上硅(SOI) 门极驱动IC
- 过电流保护
- 全通道欠压锁定保护
- 触发保护时六个开关器件全部关闭
- 内置死区时间,防止直通短路
- 独立的热敏电阻用于过温保护
- 故障清除时间可调
- UL认证
How easy can it get - World's first 1200 V transfer molded Intelligent Power Module with SiC
Combining an optimized 6-channel 1200 V SOI gate driver and 6 CoolSiC™ MOSFETs in a DIP 36X23D package Infineon introduces the world's first 1200 V transfer molded Intelligent Power Module (IPM) with silicon carbide (SiC). The new CIPOS™ Maxi family member is aiming at variable speed drive applications such as industrial motors, pumps and HVAC - making it easy to integrate SiC in the power design of motors.
The presentation will give an overview of the CIPOS™ family of IPMs highlighting the specs of the new family member. Additionally, the advantages of CIPOS™ Maxi 1200 V for servo drives, fans and pumps as well as for heating, ventilation and air conditioning will be explained.