XHP™ 是一款灵活的新型IGBT 模块平台，适用于高功率应用。
XHP™电压范围为 1.7 kV 到6.5 kV，为牵引， CAV 以及中压驱动等高要求应用提供了出色的解决方案。
XHP™ 有两种封装，为 XHP™ 2 和 XHP™ 3。
这两款封装具有相同的尺寸，长度为 140 mm，宽度为 100 mm ，高度为 40 mm 。这使产品设计师可以在不同的电流和额定电压范围内打造相似的解决方案, 以便实现更优化的功率转换器理念。
XHP™ 3 - Flexible high-power platform
Power modules have proven to be the driving force behind the rapid development in the area of power electronic systems technology, particularly in terms of energy savings, control dynamics, noise reduction as well as weight and volume reduction. Power semiconductors are primarily used to control the energy flow between energy generation and consumption. This is done extraordinary precisely and with exceptionally low losses. Continued progress in the performance of power semiconductors drives demand for corresponding improvements in packaging technology. Infineon has contributed to this evolution across more than two decades.
The new housing for high-power IGBT modules is designed to cover the full-voltage range of IGBT chips from 3.3 to 6.5 kV. One key innovation is its scalability, which will greatly simplify system design and manufacturing. Additionally, due to its robust architecture, the new high-power platform will provide long-term reliability in applications with demanding environmental conditions.