FZ1200R45HL3_S7 4500 V 1200 A 单开关 IGBT模块
综述
IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your HVDC application.
In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V
特征描述
- Lowest static losses
- Highest dynamic robustness
- High short circuit capability, self-limiting short circuit current
- Low VCEsat with positive temperature coefficient
- Gate emitter voltage of 25 V
优势
- Unbeatable robustness
- 5 -10% lower energy loss penalties possible (compared to the next best alternative)
- Standardized housing eases design and maintenance
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