FZ1200R45HL3_S7 4500 V 1200 A 单开关 IGBT模块

综述

IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your HVDC application. 

In comparison to the standard type the _S7 type can be driven with VGE=25 V instead of the usual 15 V

特征描述

  • Lowest static losses
  • Highest dynamic robustness
  • High short circuit capability, self-limiting short circuit current
  • Low VCEsat with positive temperature coefficient
  • Gate emitter voltage of 25 V

优势

  • Unbeatable robustness
  • 5 -10% lower energy loss penalties possible (compared to the next best alternative)
  • Standardized housing eases design and maintenance
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