FF750R17ME7D_B11 1700 V、750 A+C76双IGBT模块
综述
EconoDUAL™3 1700 V, 750 A TRENCHSTOP™ IGBT7半桥模块，采用放大发射极控制第7代二极管、NTC和PressFIT压接工艺。
特征描述
- 低VCE,sat
- 放大二极管
- 降低二极管的VF和RthJC
- Tvj op = 175 °C过载
- 优化开关损耗
- dv/dt可控性增强
- 改进二极管软度和Erec
- 增强宇宙射线鲁棒性
- 得以改进的端子
- PressFIT压接控制引脚和螺钉电源端子
- 集成式NTC温度传感器
- 绝缘基板
- 采用模压端子的紧凑耐用设计
优势
- 对于VF要求高的应用，得以增大功率密度
- 避免IGBT模块并联
- 通过简化逆变器系统降低系统成本
- 轻松且最为可靠的组装
图表
视频
Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.
培训
In this training we will present TRENCHSTOP™ IGBT7 by focusing on its key features and technical benefits. We will also see the existing and planned portfolio of IGBT7 for industrial drives applications.
支持
