DD1200S45KL3_B5 4500 V 1200 A 二极管 IGBT模块

综述

IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5).

特征描述

High DC Stability
High Dynamic Robustness
High surge current capability
10.2 kV AC Isolation
AlSiC Base Plate for increased Thermal Cycling Capability
Package with CTI > 600
High Creepage and Clearance Distances

优势

High power density for compact inverter designs
Standardized housing

Product image for 4.5 kV IGBT Modules in IHV-A130 housing

图表

支持