IKFW90N65ES5
综述
650 V, 75 A IGBT with anti-parallel diode in TO-247 package
Hard-switching 650 V, 75 A TRENCHSTOP™ 5 S5 IGBT discrete in a TO-247 advanced isolation package addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but easy design-in, faster time-to-market cycles and simplification of circuit design.
The TO-247-3 advanced isolation package eliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink.
特征描述
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
- 4 times Ic pulse current (100°C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
- 100 % tested isolated mounting surface
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
优势
- No need to use isolation material and thermal grease
- 35% reduction in assembling time compared to standard TO-247 with Iso-foils
- Increased yield eliminating misalignments of isolation foils
- Up to 10°C lower Tc compared to standard TO-247 with isolation material
- Up to 20% Iout increase for higher power output
- Complete manufacturing process control
- Easy paralleling
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