IGD06N65T6
综述
650 V, 6 A IGBT in TO-252-3 package
Hard-switching 650 V, 6 A TRENCHSTOP™ IGBT discrete in TO-252-3 package for a best cost efficient solution.
特征描述
- Very low VCEsat
- Maximum junction temperature 175°C
- Short circuit withstand time 3µs
- Low gate charge QG
- Pb-free lead plating; RoHS compliant
Trench and field-stop technology for 650V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat and positive temperature coefficient
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支持