IGBT 单管

综述

勇于创新、重视实践让我们行业领先

针对具体应用的不同需求，英飞凌开发了完善的分立式IGBT系列产品。较强的针对性使器件能在特定应用中处于最佳工作状态，有利于提高品质标准。英飞凌提供业界专业性最强的分立式IGBT器件，帮您实现最理想的应用性能。

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文件

评估板

软件和工具

仿真工具

Discrete IGBT Simulator - A single switch system consisting of one IGBT and one ideal free-wheeling diode is implemented to simulate the power loss and junction temperature of the IGBT device at the given static DC voltage and current conditions. This simulation aims to evaluate an IGBT device.

Discrete IGBT Motor Drive Simulator - A three-phase motor drive inverter system is implemented to simulate the power loss and junction temperature of each device at the given static load conditions.

视频

Accelerating the pace of innovation in industrial robotics

2:47

KEWAZO teamed up with Infineon to develop the world’s first on-site construction robot. The KEWAZO scaffolding robot eliminates personal safety risks, realizes significant savings on labor costs and accelerates assembly by 40% or more.

Infineon’s 600 V-650 V IGBT discretes - Portfolio Overview

2:47

Brief introduction into where our 600V/650V discrete IGBT portfolio offers the best Performance More Information Watch related Videos: TRENCHSTOP™ 5 Portfolio Overview TRENCHSTOP™ 5 Soft Hard Switching “S5” Introduction TRENCHSTOP™ 5 Soft Hard Switching “S5” TRENCHSTOP™ 5 Soft Hard Switching “S5” Application Test

合作伙伴

培训

Training for TRENCHSTOP Performance

For more information click here

如何为IGBT分立器件和模块选择栅极驱动

通过该培训，您将了解如何计算驱动不同IGBT所需的栅极电阻值，如何根据峰值电流和功耗需求确定合适的栅极驱动芯片，以及如何在实验室中，根据实际应用环境的最坏情况对栅极电阻值进行微调。

如何选择用于 SiC MOSFET 及 SiC MOSFET 模块的栅极驱动器？

碳化硅 MOSFET 为电力电子领域带来众多机遇。然而，如何通过使用配备合适栅极驱动器的碳化硅 MOSFET 来实现充足的系统效益？本培训将帮助您学习如何计算碳化硅 MOSFET 的栅极电阻参考值，如何依据峰值电流和功率耗散要求来确定合适的栅极驱动 IC，以及如何在实验室环境中根据最坏条件微调栅极电阻值。

硅、碳化硅还是氮化镓？功率器件的正确之选