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作为业界公认的IGBT技术领导者,英飞凌在不同电压电流级别提供了全面的产品组合。这些IGBT产品包括 裸芯片分立元件功率模块和完整 模块式解决方案等。



最新技术

TRENCHSTOP™ Advanced Isolation  

TRENCHSTOP™ 高级绝缘

新的 TRENCHSTOP™高级绝缘是一种尖端的绝缘封装技术。 高级绝缘材料与高级绝缘箔相比,热阻R th(j-h) 降低了35%,同时为芯片到热沉之间提供有效和可靠的热通路。 当使用新 TRENCHSTOP™ 高级绝缘技术的TO-247封装取代使用标准的绝缘箔的TO-247封装时,外壳温度T c 可以降低将近10°C左右,同时可以增加近20%的输出功率P out

了解更多

 


IGBT系列概述

 

IGBT裸片是硅基的绝缘栅双极晶体管芯片。裸片和晶圆级别的芯片可帮助电路模块制造商提高产品集成度和功率密度,并有效节约电路板空间。另外,英飞凌还提供完善的独立塑封IGBT系列: 分立式IGBT。该系列芯片由 单片IGBT续流二极管集成封装,广泛应用于 通用逆变器太阳能逆变器不间断电源(UPS)感应加热设备大型家电焊接以及 开关电源(SMPS)等领域。 分立式IGBT电流密度高且功耗低,能够提高能效、降低散热需求,从而有效降低整体系统成本。

 

功率模块是比分立式IGBT规模稍大的产品类型,用于构造电力电子设备的基本单元。这类模块通常由IGBT和二极管组成,可有多种拓扑结构。而即用型 堆栈组件模块则专用于满足大功率应用的需求。这些 堆栈常被称作系统,根据具体应用领域在 IGBT功率模块分立器件的基础上进行构造。从具有整流器、制动斩波器和逆变器的一体化 功率集成模块,到最大功率的 堆栈组件,英飞凌的产品覆盖了几百瓦到几兆瓦的功率范围。这些产品高度可靠,性能、效率和使用寿命均很出色,有利于 通用驱动器、伺服单元和可再生能源应用(如 太阳能逆变器风力发电应用)的设计。

 

HybridPACK™系列专为汽车类应用研发,可助力 电动交通应用的设计。为更好地支持汽车类应用,英飞凌还推出了符合AECQ101标准的各类 分立式IGBT功率半导体

英飞凌为您提供大部分产品的 评估板,方便简化实验室模型和产品原型,从而缩短研发周期。这样一来,您就能在最短的时间内获得结论性成果。


相关信息

Highpower Thyristors & Diodes   EiceDRIVER™   Intelligent Power Modules

 

Power-Management-Selection-Guide

 

Shortform Catalog

 

Gate Driver ICs Selection Guide

 

IPOSIM - Power Simulation

 

PowerGuru



600V_TRENCHSTOP_TO-247_vA_plain  

TRENCHSTOP™ Performance IGBT 

全新分立式TRENCHSTOP™ Performance IGBT (60TP)能效更高,价格更具竞争力,主要用于硬开关拓扑结构中工作频率低于30kHz的应用。

了解更多


Product_image_Mipaq_pro  

 

 

MIPAQ™ Pro

MIPAQ™ Pro是经过完全检验和充分测试的智能功率模块(IPM),集成了IGBT、门极驱动、散热器、传感器、数控电子元件和数字总线通信功能。MIPAQ™ Pro模块采用半桥配置,有1200V和1700V两种阻断电压规格。 探索智能电路保护的新维度


Product_image_xhp  

 

 

XHP™ - 灵活的大功率平台

采用新型外壳封装的大功率IGBT模块设计旨在覆盖3.3kV到6.5kV的全电压范围。新型封装的产品预计将主要应用在工业级驱动、牵引、可再生能源和电力传输等领域。 了解英飞凌XHP ™的更多信息


Product image PrimePACKIGBT5.XT  

采用IGBT5 和.XT工艺的PrimePACK™ 模块

创新性的IGBT5和 .XT技术首先用来扩展了广为人知的PrimePACK™系列。运用新技术后,模块的功率密度提高了25%,寿命延长了10倍。 了解英飞凌采用IGBT5和.XT工艺的PrimePACK™模块


PrimePACK™ with TIM  

 

导热界面材料(TIM)

TIM是英飞凌开发的新型导热界面材料(Thermal Interface Material)的缩写。随着功率电子器件中功率密度的持续增加,功率模块和散热器间的导热界面也面临着更大挑战。 阅读文章、评论和应用笔记等了解更多信息。


SmartPIM 2  

 

 

 

智能功率模块

智能功率模块系列不仅拥有发展成熟的PressFIT技术所带来的种种稳定特性,还具备许多高级功能。整个系列的产品都遵循相同的安装过程,根据外壳尺寸的不同可覆盖到高达200A的电流范围。 了解智能功率模块的更多信息

 

 


Product image Easy 2B - Pressfit - blank  

组串式光伏逆变器模块

该系列模块专为组串式光伏逆变应用设计,可有效提高逆变器的效率和性能。成熟的PressFIT技术使模块组装无需焊接,加快了安装速度。 了解组串式光伏逆变器模块的更多信息

 

碳化硅(SiC)

英飞凌现提供基于碳化硅(SiC)的功率模块。现代电力电子应用创新的关键在于提高功率密度和能效。无论是在功率模块中只采用碳化硅芯片,还是将其与硅基功率器件相结合,都能帮助提高产品性能、推动创新。 了解碳化硅模块的更多信息

 

SiC-icon


Product image 2ED300C17-S_2  

 

 

 

EiceDRIVER™ - 门极驱动IC和电路板

用于驱动MOSFET、IGBT和IGBT模块的高度可靠的解决方案,帮助客户轻松实现可靠且高效的应用。 了解该系列高低压驱动的更多信息


Product image 2ED020I12FA  

 

 

汽车级EiceDRIVER™

英飞凌EiceDRIVER™系列包括单通道和双通道的汽车级IGBT驱动IC,具备电流隔离和双向信号传输能力,且耐高温。 了解汽车级EiceDRIVER™的更多信息


Product image P-IG-IHM_B ifx  

IHM / IHV IGBT模块B系列

广为人知的IHM(IGBT High-Power Modules,大功率IGBT模块)和IHV(IGBT High-Voltage Modules,高压IGBT模块)系列器件性能稳健,在40/-50°C 到+150°C的范围内的任何温度都能保证最高的可靠性。B系列是原系列的扩展,支持500A到3600A的电流、1200V到4.5kV的电压。根据不同的拓扑结构(半桥模块、单开关模块、斩波器模块和二极管模块),该系列可用于各种不同尺寸的大功率逆变器。 了解IHM / IHV IGBT模块B系列的更多信息

 

3.3kV IHV模块

IHM / IHV 系列涵盖了所有可能的逆变器功率大小,支持单开关模块、半桥模块、斩波器模块和二极管模块几种不同的拓扑结构。 了解3.3kV IHV产品系列的更多信息


Product image P-IG-IHV-H_IH12 ifx  

4.5kV IHV模块

4.5kV场截止沟道IGBT和场截止二极管芯片填补了3.3kV和6.5kV IGBT模块之间电压级的空缺。 了解4.5kV模块的更多信息

 

6.5kV IHV模块

新引入的RCDC(Reverse conducting IGBT with diode control,具备二极管控制功能的逆导型IGBT)技术能帮助提高产品功率密度和能效,延长寿命周期,提高可靠性,改进温度特性,并降低系统成本,满足了客户在高压应用中的需求。该模块将IGBT和二极管两种器件的功能集成在了一片芯片上,奠定了大功率IGBT的行业基准,在世界范围内得到广泛应用。 了解6.5kV IGBT模块的更多信息


Product image 34mm  

 

 

34 mm & 62 mm IGBT模块

灵活、可靠、电气性能佳都是成功逆变器布局的标志。34mm和62mm 的半桥和单开关系列采用了先进的IGBT4芯片技术,完美适用于各类应用中的现代逆变器理念。

业界知名的英飞凌34mm和62mm模块是您电路设计的不二之选。.


Product image EconoPACK +_OEx  

 

 

EconoPACK™+ D系列

创新性的EconoPACK™+ D系列采用PressFIT辅助端口工艺,实现了可靠且免焊接的压入式接触。必要时,PressFIT触点也支持传统焊接方式。D系列模块通过注射成型控制、电源端子和超声波焊接电源端子设计,更加坚固耐用。 使用EconoPACK™+ D系列开发您的新产品


Product image EconoPACK 4  

 

EconoPIM™/ EconoPACK™ 650V IGBT 4

新型650V IGBT-E4芯片是针对具体应用需求优化过的EconoPIM™/ EconoPACK™版本。新器件改进了产品的关断软度,从而降低了电磁干扰。 了解EconoPIM™/ EconoPACK™ 650V IGBT 4芯片的更多信息。

 

EconoPACK™ 4 IGBT 模块

EconoPACK™ 4 IGBT模块进一步完善了广为人知的Econo系列。EconoPACK™ 4采用螺旋电源终端,电气连接性能出色。为便于使用,在该模块中DC和AC链路分离存在,区分起来一目了然。

了解EconoPACK™ 4 IGBT模块的更多信息


Product image EconoDUAL 3  

 

 

EconoDUAL™ 3 650V/ 1200V/ 1700V 600A

英飞凌为您提供发展成熟的EconoDUAL™ 3系列产品。我们的器件具备先进的安装技术,热性能卓越可实现完全功率利用,而且可在现有逆变器设计的基础上即插即用。该器件还有PressFIT和焊脚两种安装形式可供选择,让您的设计更加灵活。

性能卓越的EconoDUAL™ 3系列器件将为您的成功添砖加瓦。业界领先的EconoDUAL ™ 3 650V/ 1200V/ 1700V 600A系列芯片


Product image EconoDUAL 3  

 

 

EconoDUAL™ 3 650V/ 1200V/ 1700V 600A

英飞凌为您提供发展成熟的EconoDUAL™ 3系列产品。我们的器件具备先进的安装技术,热性能卓越可实现完全功率利用,而且可在现有逆变器设计的基础上即插即用。该器件还有PressFIT和焊脚两种安装形式可供选择,让您的设计更加灵活。

性能卓越的EconoDUAL™ 3系列器件将为您的成功添砖加瓦。业界领先的EconoDUAL ™ 3 650V/ 1200V/ 1700V 600A系列芯片


Product Selection Guide

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Product Catalogue

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Additional Product Information

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Presentations

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Application Brief

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评估板

评估板 系列 描述 状态
EVAL-2EDL23I06PJ Gate Driver, IGBT Discrete Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control THT Highspeed3-IGBT IKP20N60H3 in TO220 package.
  • Driving IKP20N60H3
  • For equipping 2EDL23I06PJ EiceDRIVER™
active and preferred
MA070E12 IGBT Modules, Gate Driver Evaluation Adapter board with booster stage for 62mm modules up to 1200V.
  • For connecting 1200V 62mm Modules and driver boards
on request
EVAL-2ED020I12-F2 Gate Driver, IGBT Discrete Evaluation Board for 2ED020I12-F2 - Galvanic isolated dual channel IGBT driver IC with CT technology for 600V/1200V IGBTs.
  • Driving IGBTs
  • For equipping 2ED020I12-F2 EiceDRIVER™
active and preferred
F3L2020E12-F-P_EVAL Gate Driver, IGBT Modules Evaluation Driver board for 1200V EconoPACK™ 4 3-Level Modules in NPC2-Topology. Coreless transformer IGBT drivers (replaced by 1ED020I12-F2) are used for gate control and protection.
  • Equipped with EiceDRIVER™ 1ED020I12-F2
  • For driving 1200V 3-level EconoPACK™ 4 modules (NPC2)
on request
MA401E17 IGBT Modules, Gate Driver Evaluation Adapter Board with booster stage for IHM IGBT Modules up to 1700V (140mm x 190mm).
  • For connecting 1700V IHM IGBT Modules and driver boards
on request
MA300E17 IGBT Modules, Gate Driver Evaluation Adapter board containing a booster stage for driving 1700V PrimePACK™ in single or parallel configuration.
  • For connecting 1700V PrimePACK™ IGBT Modules and driver boards
on request
HYBRID KIT1+ IGBT Modules, Gate Driver Evaluation Kit including HybridPACK™ 1 power module, driverboard with coreless transformer isolated driver (1ED020I12- FA) and logic board
  • CAN Transceiver TLE6250
  • DC/DC Converter TLE8366EV, TLE7368
  • Diodes: BAS16, BAT54-04W
  • Driver IC 1ED020I12FA2
  • Including: IGBT Module FS400R07A1E3
  • MOSFETs: IPD90P03P4L-04, IPD144N06NG, BSS138N
  • Microcontroller SAK-TC1767-256F133HL
  • Transitor: BCR183S, BCR10PN, BDP949
  • Voltage Regulator TLE4266, TLE4296-2GV50
on request
EVAL-IGBT-650V-TO247-4 IGBT Discrete, Gate Driver Adaptable double pulse tester for IGBTs in TO-247 4pin package
    active and preferred
    MA3AE12 IGBT Modules Isolating amplifier for current measurement with MIPAQ™ base up to 1200V.
    • For 1200V MIPAQ™ base Modules
    on request
    HYBRID KIT2 ENH SIL IGBT Modules, Gate Driver Evaluation Kit including HybridPACK™ 2 Enhanced power module and driverboard with EiceDRIVER™ SIL 1EDI2002AS, EiceDRIVER™ Boost 1EBN1001AE and AURIX™ 32-bit multicore microcontroller TC277
    • AURIX™ 32-bit multicore microcontroller TC277
    • EiceDRIVER™ Boost 1EBN1001AE
    • EiceDRIVER™ SIL 1EDI2002AS
    • HybridPACK™ 2 Enhanced FS800R07A2E3_B31
    on request
    MA200E12 IGBT Modules, Gate Driver Evaluation Adapter board with booster stage for 1200V EconoDUAL™ 3 modules.
    • For connecting 1200V EconoDUAL™ 3 Modules and driver boards
    on request
    EVAL-1ED020I12-BT Gate Driver, IGBT Discrete Evaluation Board for 1ED020I12-BT - Galvanic isolated single channel IGBT driver IC with CT technology for 600V/1200V IGBTs.
    • Driving IGBTs
    • For equipping 1ED 1200V single channel EiceDRIVER™
    active and preferred
    MA300E12 IGBT Modules, Gate Driver Evaluation Adapter board containing a booster stage for driving 1200V PrimePACK™ in single or parallel configuration.
    • For connecting 1200V PrimePACK™ IGBT Modules and driver boards
    on request
    MA3L080E07 IGBT Modules Evaluation Adapter Board with booster stage for EconoPACK™ 4 3-Level Modules in NPC1-Topology (650V)
    • For connecting 650V EconoPACK™ 4 IGBT Modules (NPC1) and Driver boards
    on request
    7ED020E12-FI-W2 IGBT Modules, Gate Driver Evaluation Driver Board for EasyPIM™ 2B PressFIT Modules up to 1200V. Coreless transformer halfbridge IGBT drivers (2ED020I12-FI) are used for gate control and protection.
    • Equipped with EiceDRIVER™ 2ED020I12-FI
    • For driving EasyPIM™ 2B PressFIT Modules
    on request
    MA3L120E07 IGBT Modules Evaluation Adapter Board with booster stage for EconoPACK™ 4 3-Level Modules in NPC2-Topology (650V)
    • For connecting 650V EconoPACK™ 4 IGBT Modules (NPC2) and Driver boards
    on request
    EASYKIT DCDC IGBT Modules, Gate Driver DC/DC converter system Evaluation Kit for the F4-50R07W1H3_B11A EasyPACK 1B Automotive Power Modules.
    • Diodes BAS3010, BAT64, BAS16, SMBD914
    • Driver IC 1ED020I12, 2ED020I12
    • Including: IGBT Module F4-50R07W1H3
    • MOSFETs IPB180N08, BSO604
    • Transistor BC817
    • Voltage Regulator TLE7274
    on request
    MA401E12 IGBT Modules, Gate Driver Evaluation Adapter Board with booster stage for IHM IGBT Modules up to 1200V (140mm x 190mm).
    • For connecting 1200V IHM IGBT Modules and driver boards
    on request
    7ED020E12-FI-U1 IGBT Modules, Gate Driver Evaluation Driver Board for SmartPIM 1 Modules up to 1200V. Coreless transformer half-bridge IGBT drivers (2ED020I12-FI) are used for gate control and protection.
    • Equipped with EiceDRIVER™ 2ED020I12-FI
    • For driving SmartPIM 1 Modules
    on request
    EVAL-1ED020I12-B2 Gate Driver, IGBT Modules Evaluation Board for 1ED020I12-B2 - Galvanic isolated single channel IGBT driver IC with CT technology for 600V/1200V IGBTs.
    • Driving IGBTs
    • For equipping 1ED 1200V single channel EiceDRIVER™
    active and preferred
    MA3L120E12_EVAL IGBT Modules Evaluation Adapter board with booster stage for 1200V EconoPACK™ 4 3-Level Modules in NPC2-Topology.
    • For connecting 1200V EconoPACK™ 4 IGBT Modules (NPC2) and Driver boards
    on request
    MA070E17 IGBT Modules, Gate Driver Evaluation Adapter board with booster stage for 62mm modules up to 1700V.
    • For connecting 1700V 62mm Modules and driver boards
    on request
    MA200E17 IGBT Modules, Gate Driver Evaluation Adapter board with booster stage for 1700V EconoDUAL™ 3 modules.
    • For connecting 1700V EconoDUAL™ 3 Modules and driver boards
    on request
    EVAL-2EDL05I06PF Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 2EDL05I06PF - Optimized 600V half bridge gate driver IC with LS-SOI technology to control power devices like MOS-transistors or IGBTs.
    • Driving IGBT Modules
    • For equipping 1ED 1200V single channel EiceDRIVER™
    active and preferred
    F3L030E07-F-W2 IGBT Modules, Gate Driver Evaluation Driver board for 650V Easy2B 3-level modules in NPC1-topology. Coreless transformer IGBT drivers (replaced by 1ED020I12-F2) are used for gate control and protection.
    • Equipped with EiceDRIVER™ 1ED020I12-F2
    • For driving Easy2B 3-level Modules
    on request
    F3L020E07-F-P IGBT Modules, Gate Driver Evaluation Driver board for 650V 3-level EconoPACK™ 4 modules in NPC1-topology. Coreless transformer IGBT drivers (replaced by 1ED020I12-F2) are used for gate control and protection.
    • Equipped with EiceDRIVER™ 1ED020I12-F2
    • For driving 650V EconoPACK™ 4 3-level IGBT Modules (NPC1)
    on request
    HYBRID KIT1 PIN-FIN IGBT Modules Evaluation Kit including HybridPACK™ 1 Pin-Fin power module, driverboard with coreless transformer isolated driver (1ED020I12- FA) and logic board
    • CAN Transceiver TLE6250
    • DC/DC Converter TLE8366EV, TLE7368
    • Diodes BAS16, BAT54-04W
    • Driver IC 1ED020I12FA2
    • Including: IGBT Module FS400R07A2E3_H5
    • MOSFETs IPD90P03P4L-04, IPD144N06NG, BSS138N
    • Microcontroller SAK-TC1767
    • Transistor BCR183S, BCR10PN, BDP949
    • Voltage Regulator TLE4296-2GV50, TLE4266
    on request
    IRMDG62-1-D2
    • IRGS4610DPBF
    active
    WM_MOTOR_CONTROL_01 Microcontroller, IGBT Discrete, Gate Driver, Power Controller (PWM, PFC), Linear Voltage Regulator (LDO) This solution demonstrates sensorless FOC for washing machine PMSM motor control. It implemented key software functions, a step-by-step implementation, and linking up with µC/Probe™ XMC™. User will be able to use of µC/Probe™ XMC™ to visualise data and fine-tune FOC.
    • 6EDL04I06NT
    • ICE3RBR4765JG
    • IFX1763XEJV33
    • IKD10N60R
    • XMC1302
    MA040E12 IGBT Modules Evaluation board containing an isolated gate driver power supply and logic interface for  MIPAQ™ serve.
    • For driving MIPAQ™ serve Modules
    on request
    MA400E17 IGBT Modules, Gate Driver Evaluation Adapter board with booster stage for IHM modules up to 1700V (130mm x 140mm).
    • For connecting 1700V IHM IGBT Modules and driver boards
    on request
    2ED100E12-F2 IGBT Modules, Gate Driver Evaluation Driver Board for EconoDUAL™3 Modules using a coreless transformer single-channel driver (replaced by the EiceDRIVER™ 1ED020I12-F2)
    • Equipped with EiceDRIVER™ 1ED020I12-F
    • For driving EconoDUAL™3
    on request
    2ED250E12-F IGBT Modules, Gate Driver Evaluation Driver Board for PrimePACK™ Modules up to 1200V using a coreless transformer single-channel driver (replaced by 1ED020I12-F2).
    • Equipped with EiceDRIVER™ 1ED020I12-F
    • For driving PrimePACK™ IGBT Modules
    on request
    F3L2020E07-F-P IGBT Modules, Gate Driver Evaluation Driver board for 650V 3-level EconoPACK™ 4 modules in NPC2-topology. Coreless transformer IGBT drivers (replaced by 1ED020I12-F2) are used for gate control and protection.
    • Equipped with EiceDRIVER™ 1ED020I12-F2
    • For driving 650V 3-level EconoPACK™ 4 modules (NPC2)
    on request
    EVAL-6EDL04I06PT Gate Driver, IGBT Discrete Evaluation Board for 6EDL04I06PT - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power devices like MOS-transistors or 600V IGBTs
    • Driving RCD-IGBTs
    • For equipping 6EDL04N02PR EiceDRIVER™
    active and preferred
    EVAL-1EDI60I12AF Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 1EDI60I12AF – two 1200V single channel coreless transformer isolated gate driver IC in half bridge configuration for MOS-transistors or IGBTs.
    • Driving MOS-transistors or IGBTs
    • For equipping 1EDI 1200V single channel EiceDRIVER™
    active and preferred
    2ED300E17-SFO Gate Driver, IGBT Modules This evaluation board for the 2ED300C17-S / -ST IGBT driver boards can be used for all medium and high power IGBT modules up to 1700V.
    • For equipping EiceDRIVER™ 2ED300C17-S / -ST
    on request
    MA400E12 IGBT Modules, Gate Driver Adapter board with booster stage for 1200V IHM modules (130mm x 140mm). The IGBT module is to be ordered separately.
    • For connecting 1200V IHM IGBT Modules and driver boards
    on request
    6ED100E12-F2 IGBT Modules, Gate Driver Evaluation Driver board for EconoPACK™+ IGBT modules, using a coreless transformer single-channel driver (replaced by 1ED020I12-F2).
    • Equipped with EiceDRIVER™ 1ED020I12-F
    • For driving EconoPACK™+ IGBT Modules
    on request

    Simulation Models

    Title Size Date Version
    56 KB 22 三月 2017 01_01
    6 KB 14 七月 2016 01_01
    33 KB 17 十月 2016 01_00
    9 KB 09 十月 2015 01_00
    6 KB 19 十二月 2016 06_00
    7 KB 17 六月 2014
    8 KB 16 七月 2013 01_00
    7 KB 11 七月 2013 03_00
    8 KB 11 七月 2013 03_01
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    5 KB 11 七月 2013 03_05
    4 KB 11 七月 2013 02_06
    9 KB 11 七月 2013 03_00
    5 KB 11 七月 2013 02_06
    10 KB 11 七月 2013 01_00
    4 KB 11 七月 2013 01_00
    6 KB 11 七月 2013 01_00
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    4 KB 11 七月 2013 02_06
    7 KB 20 三月 2017 00_06
    6 KB 11 七月 2013 03_00
    6 KB 11 七月 2013 01_00
    8 KB 11 七月 2013 01_00
    9 KB 03 一月 2013
    14 KB 03 一月 2013
    14 KB 22 六月 2012
    3 KB 26 七月 2007 01_00

    Simulation Tool

    Title Size Date Version
    793 B 27 九月 2016 01_00
    783 B 27 九月 2016 01_00
    809 B 06 六月 2016 01_00
    2.7 MB 09 十二月 2016 07_09
    trenchstop-performance-elearning

    eLearning 600V TRENCHSTOP™ Performance IGBT

    Infineon's new TRENCHSTOP™ Performance (60TP) IGBT is the new higher efficiency and competitive price IGBT for applications working up to 30kHz in hard-switching topologies

     
    Length 2:42
    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    TRENCHSTOP™ 5 Soft Hard Switching “S5” Introduction

    Brief introduction into the key values and customer benefits of the new TRENCHSTOP™ S5 Family

     
    Length 2:42
    XHP™ - Infineon´s new flexible high power platform

    XHP™ - Infineon´s new flexible high power platform

    Get an first impression how XHP™ will boost your system. This video explain how you can reach the next level of flexibility with Infineon´s new high power platform.

     
    Length 4:36
    Thermal Interface Material

    Thermal Interface Material

    A thermal interface material, especially developed for and pre-applied to Infineon`s power modules outperforms the general purpose materials available.

     
    Length 1:48
    EiceDRIVER™ 2EDL Driver IC Family

    EiceDRIVER™ 2EDL Driver IC Family

    EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

     
    Length 9:21
    TRENCHSTOP™ 5 - Portfolio and Summary

    TRENCHSTOP™ 5 - Portfolio and Summary

    The new 650V TRENCHSTOP™5 IGBT technology from Infineon redefines the “Best-in-Class IGBT” by providing unmatched performance in terms of efficiency. When high efficiency, lower system costs and increased reliability are demanded, 650V TRENCHSTOP™5 is the only option. The new TRENCHSTOP™5 IGBTs deliver a dramatic reduction in switching and conduction losses for PFC and PWM topologies in applications such as Welding, Uninterruptible Power Supply and Solar. 650V TRENCHSTOPTM5 is available in two variants, HighSpeed 5 (H5) for high speed and HighSpeed5 Fast (F5) for highest efficiency.

     
    Length 2:39
    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    Low VCE(sat) Optimized TRENCHSTOP™ 5 L5

    The TRENCHSTOP™ 5 family L5 with low saturation voltage VCE(sat) is optimized for polarity switches at switching frequencies of 50kHz-20kHz. The intrinsically low conduction losses of the 55µm TRENCHSTOP™ 5 thin wafer technology have been reduced further with additional optimization of the carrier profile.

     
    Length 2:42
    Discrete IGBT in TO-247PLUS - Technical Discription and Performance Part1

    Discrete IGBT in TO-247PLUS - Technical Discription and Performance Part1

    TO-247PLUS is intended to be mounted using clips or mechanical pressure systems. Thanks to the improved thermal performance Rth(jh) respect to standard TO-247, even using the same silicon dice than in a Standard TO-247, customers can reach higher current levels at the same junction temperature or getting lower junction temperature at the same collector 

     
    Length 3:22
    TRENCHSTOP™ 5 IGBTs in Kelvine Emitter Configuration - Benefits of TRENCHSTOP™ 5 in TO-247 4pin

    TRENCHSTOP™ 5 IGBTs in Kelvine Emitter Configuration - Benefits of TRENCHSTOP™ 5 in TO-247 4pin

    This video will provide you information about the best in class performance of the TRENCHSTOP™5 IGBT technology. Infineon offers the technology in a high power package with an extra Kelvin Emitter pin.

     
    Length 2:06
    RC-H5 The Next Generation Reverse Conduction IGBT Part 1 of 2

    RC-H5 The Next Generation Reverse Conduction IGBT Part 1 of 2

    The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. RC-H5 offers up to 30% reduction in switching losses, allowing designers to use higher frequencies.

     
    Length 5:30
    PressFit Technology

    PressFit Technology

    Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.PressFIT is a force fitting technology for power semiconductor modules, which offers these possibilities.

     
    Length 3:00
    Infineon’s New 4.5kV IHV IGBT

    Infineon’s 4.5kV IHV IGBT

    The new 4.5kV IGBT modules are optimized for use in traction drives and high-voltage DC transmission systems.

     
    Length 4:19
    Power Conversion EN

    Power Conversion EN

    Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims. These high-performance products boost the reliability and efficiency of inverters for photovoltaic or wind applications.

     
    Length 2:02
    Advanced Transmission & Distribution EN

    Advanced Transmission & Distribution EN

    Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.

     
    Length 1:39
    Storing solar energy at home

    Storing solar energy at home

    New technology from Infineon promotes the adoption of renewables by enabling solar energy to be stored efficiently

     
    Length 8:05
    Renewable energy from offshore wind farms

    Renewable energy from offshore wind farms

    Energy means life: It heats houses, powers cars and lights megacities. The global appetite for energy is voracious, while resources are dwindling. One third of the energy consumed worldwide is electricity and the trend is rising. The name of the key energy source of the future is energy efficiency. Optimal electricity use is achieved by harnessing smart semiconductor technology: Innovative chip solutions fine-tune cars, industrial plants, consumer and household electronics to use less energy.

     
    Length 7:32

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