IGC100T75H12RYA Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology
综述
Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.
特征描述
- Best-in-class current density
- Suitable for 470 V VDC systems
- Maximum junction temperature of 185 °C
- High switching speed
- Very low VCEsat
- Very low switching losses
- Short tail current
- Very tight parameter distribution
- Short circuit robustness tsc = 3 µs
- Product validation acc. to AEC-Q101
优势
- Ideal for automotive requirements
- Available in 750 V and 1200 V class
- Customized development (on demand)
- Up to 25% higher output current density
- Decreased losses and increased max. Tvj
- Cost benefit due to module shrink
- Low costs per Ampere on system level
- Less parallelization effort and costs
- High reliability and quality
- Drop-in replacement
- Simple gate drive design
支持
