Solutions for gate driver and power switches
Select your Gate Driver perfectly matching your Switches, Systems and Applications
Every switch needs a driver - Every driver needs a switch. We as the market leaders in power semiconductors know how important a perfectly harmonized system is for our customers application. Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs.
We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers. The following describes typical applications using Infineon gate drivers together with power switches and modules.
*Coming soon
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
On-board charger & DC-DC converter | 20 | Dual low-side | AUIRB24427S | Booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC input signals | Automotive IGBT Discretes CoolMOS™ CPA CoolMOS™ CFDA |
100 | Half bridge | AUIR2085S | Enable half-bridge DC-bus converters for 48 V distributed systems with reduced component count and board space , programmable switching frequency < 500 kHz, adjustable dead-time | ||
200 | Single low-side | AUIRS1170S | Secondary side high speed synchronous rectification controller, ccm operation with SYNC function, > 500 kHz, cycle by cycle MOT check | ||
600 | High and low-side | AUIRS2113S | Tolerant to negative transient voltage, UVLO | ||
AUIRS2191S | Tolerant to negative transient voltage, UVLO, matched propagation delay | ||||
Auxiliary drives (fans, pumps, HVAC, heat pump, PTC heater) | 600 | High and low-side | AUIRS21814S | Tolerant to negative transient voltage, UVLO , matched propagation delay | Automotive IGBT Discretes |
Three-phase | AUIRS2336S | Drives up to six IGBT/MOSFET power devices, OCP, over-temperature shutdown input, advanced input filter, integrated dead-time protection, shoot-through protection, UVLO | |||
700 | Single high-side | AUIR2114SS* | UVLO on both supply lines (with hysteresis), desaturation detection on both sides, with internal biasing resistor, soft shutdown function and pin | Automotive IGBT Discretes AUIRG4PH50S, AUIRGDC0250 |
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Wireless in-cabin phone charging | 600 | High and low-side | AUIRS2301S | Tolerant to negative transient voltage, UVLO, matched propagation delay | Automotive MOSFET |
Application | Driver Voltage class [V] | Configuration | Driver | Description | Suitable switches |
Main inverter | 400 | Single high-side | 1EBN1001AE | IGBT / MOSFET gate driver booster for automotive motor drives above 10 kW, peak current up to ±15 A, support for active clamping with very fast reaction time, active clamping disable, ASC Input signals | Automotive IGBT Discretes |
1200 | 1EDI2001AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO | |||
1EDI2002AS | |||||
1EDI2010AS | On-chip galvanic insulation (up to 6 kV), support of 5 V logic levels, 16-bit standard SPI interface (up to 2 MBaud) with daisy chain support, enable input pin, pseudo-differential inputs for critical signals. Power-on reset pin, debug mode, pulse suppressor, TLTO, integrated ADC |
Application | Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
DC-DC
|
600 V | High and Low Side
|
IRS2186S | 4/4 A | High current for high power and fast switching frequency | |
650 V | 2ED2110S06M | 2.5/2.5 A | Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | |||
2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN | ||||
1200 V | 1-ch isolated | 1EDI20N12AF | 4/3.5 A | EiceDRIVER™ 1ED Compact with separate output | ||
High and Low Side | IR2213S | 2/2.5 A | Shutdown and Separate power supply | |||
Half-Bridge | IR2214SS | 2/3 A | DESAT, soft-off, two stage turn on, fault reporting, Synchronization | |||
DC-DC |
1200 V | 1-ch isolated | 10/9.4 A | EiceDRIVER™ 1ED Compact with separate output | ||
2-ch isolated | 2EDR8259H* | 4/8 A | EiceDRIVER™ 2EDi with reinforced isolation | |||
2300 V | 1-ch isolated | 1ED3122MC12H | 10/9 A | EiceDRIVER™ X3 Compact with Miller clamp | ||
DC-DC |
1ED3124MC12H | 13.5/14 A | EiceDRIVER™ X3 Compact with separate output |
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1ED3241MC12H | 18/18 A | EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
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1ED3321MC12N | 6/8.5 A | EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
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1ED3890MC12M | 7.5/11 A | EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp | ||||
Single-end boost PFC |
25 V | 1-ch non-isolated | 1EDN8511B | 4/8 A | Separate output, 19 ns propagation delay | CoolMOS™ MOSFET P7 650 V CoolSiC™ 1200V CoolSiC™ |
1ED44171N01B* | 2.6/2.6 A | Enable, programmable fault clear time, UVLO | ||||
1ED44175N01B | 2.6/2.6 A | Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing | ||||
1ED44176N01F | 0.8/1.75 A | Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM | ||||
IRS44273L | 1.5/1.5 A | Additional OUT pin | ||||
200 V | 1EDN8550B | 4/8 A | True differential inputs, with ± 80 V static ground-shift robustness | |||
Interleaved boost PFC |
22 V | 2-ch non-isolated | 2EDN8534F | 5/5 A | 2 ns delay matching, 19 ns propagation delay | |
24 V | 2ED24427N01F | 10/10 A | Enable, Low RDSON outputs, thermal pad | |||
25 V | IRS4427S | 2.3/3.3 A | Matched propagation delay | |||
Totem pole PFC |
650 V | High and Low Side | 2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN | 600 V CoolMOS™ CFD7 MOSFET |
1200 V | 2-ch isolated | 2EDB8259F* | 4/8 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||
2EDB8259Y* | 5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||||
Vienna rectifier |
22 V | 2-ch non-isolated | 2EDN7534F | 5/5 A | 2 ns delay matching, 19 ns propagation delay | 650 V CoolMOS™ C7 MOSFET IPP65R045C7, IPW65R019C7, IPL65R070C7 |
1200 V | 1-ch isolated | 1EDB6275F | 5/9 A | EiceDRIVER™ 1EDB with basic isolation (3kV UL 1577) | ||
1EDI60N12AF | 10/9.4 A | EiceDRIVER™ 1ED Compact with separate output |
*Coming soon
PFC | 22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 IPN70R360P7S, IPD70R360P7S, IPA70R360P7S, IPAN70R360P7S IPN80R600P7, IPD80R280P7, IPP804280P7, IPA80R280P7 |
25 V | 1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
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1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
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IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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200 V | 1-ch non-isolated |
1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
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22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
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24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
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25 V | IRS4427S | 2.3/3.3 A |
Matched propagation delay |
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HS buck
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100 V | Single high-side |
0.16/0.24 A |
UVLO on low-side and high-side |
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200 V | 1-ch non-isolated |
4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness | |||
Single high-side |
IRS20752L | 0.16/0.24 A |
UVLO on low-side and high-side |
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600 V | Single high-side |
IRS25752L | 0.16/0.24 A |
UVLO on low-side and high-side |
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Fly-back | 22 V | 1-ch non-isolated |
1EDN7511B | 4/8 A |
2 ns delay matching, 19 ns propagation delay |
|
200 V | 1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
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HB(LLC) |
600 V | Half-Bridge | IRS2153DS | 0.18/0.26 A |
Self-oscillating, Integrated bootstrap FET, Shutdown |
|
650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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HB(LLC) |
1200 V | 1-ch isolated |
1EDI60N12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
|
Half-Bridge |
2ED020I12-FI | 1.5/2.5 A |
EiceDRIVER™ Enhanced 2ED-FI with OPAMP and comparator (isolation only on the high side) |
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2-ch isolated |
2EDB8259F* |
5/9 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB8259Y* |
5/9 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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Sync buck |
200 V | High and Low Side |
IR2010S | 3/3 A | Shutdown | IPW60R180P7, IPD60R180P7, IPN60R360P7S, IPP60R180P7 IMZA65R027M1H, IMZA65R107M1H |
600 V | Half-Bridge |
0.36/0.7 A | Infineon SOI, integrated BSD |
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650 V | Half-Bridge |
0.36/0.7 A | Infineon SOI, integrated BSD |
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1200 V | 1-ch isolated |
1EDB9275F | 5.4/9.8 A | EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577) |
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2-ch isolated |
2EDB8259F* |
5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB8259Y* |
5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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Application | Driver Voltage class [V] | Configuration | Driver | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Motor Inverter <3kW (<48 V Battery) |
60 V |
Three-Phase |
6EDL7141 | 1.5/1.5 A |
Fully programmable, integrated power supplies and current sense amplifiers, slew rate control, protection features |
60 V StrongIRFET™ |
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad |
||
Three-Phase | 6ED2742S01Q* |
1/2 A |
SOI, integrated BSD, PMU, 100% DC w. trickle charge pump, programmable OCP w. select gain, CS amp, RFE | |||
200 V | Three-Phase | 6EDL04N02PR | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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High and Low Side |
IRS2005S | 0.29/0.6 A |
UVLO, MTON/OFF,max=50ns, 3.3V-15V input |
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High and Low Side |
IRS2011S | 1/1 A |
UVLO, MTON/OFF,max=20ns, 3.3V-5V input |
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600 V | High and Low Side |
2EDL05N06PF | 0.36/0.7 A |
SOI, UVLO, MTON/OFF,max=60ns, 3.3-15V input, BSD |
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Three-Phase | 6EDL04N06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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Single high-side | IRS21271S | 0.2/0.42 A |
UVLO, OCP, 3-15V input, fault reporting |
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Motor Inverter 3-10kW (48-96 V Battery) |
160 V | High and Low Side |
2ED2738S01G* |
4/8 A |
SOI, integrated BSD, UVLO, separate VSS/COM, thermal pad |
IPT010N08NM5, IPTG011N08NM5, IPTC014N08NM5, IPB015N08N5, IRLS4030, IRF100B201 |
200 V | 1-ch non-isolated | 4/8 A |
True differential inputs, with ± 80 V static & ± 150V dynamic ground-shift robustness, separate SRC/SNK output pins |
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500 V | High and Low Side |
IRS2110S | 2/2 A |
MTON/OFF,max=10ns, Separate power and logic ground, SD pin, 3-20V input |
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600 V | High and Low Side |
2EDL23N06PJ | 2.3/2.8 A |
3.3V-15V input, -100V transient , PGND, SOI, integrated BSD, OCP, UVLO, Enable, fault reporting |
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High and Low Side | IRS21867S | 4/4 A |
3-5V input, MTON/OFF,max=35ns, UVLO, neg. transient robust |
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650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient |
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High and Low Side |
2ED2181S06J | 2.5/2.5 A |
SOI, integrated BSD, 3.3-15V input, MTON/OFF,max=35ns, -100V transient, separate logic and power ground |
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Motor Inverter |
1200 V | 1-ch isolated |
1EDB8275F | 5/9 A |
3kV basic isolation w. CT technology, (UL1577), separate SRC/SNK output, UVLO (4 types), CMTI > 300 V/ns |
IPB107N20N3G, IPTG111N20NM3FD |
1-ch isolated |
1EDI60N12AF | 10/9.4 A |
Short Circuit Clamping, Active Shut-Down, UVLO, separate SRC/SNK output , 3.3-15V input |
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2-ch isolated |
2EDB8259F* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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2-ch isolated | 2EDB8259Y* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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2300 V | 1-ch isolated | 1ED3121MC12H | 5.5/5.5 A | EiceDRIVER™ X3 Compact with separate output | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Single-end boost PFC |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
IKWH30N65WR6, IKW40N65ET7 IDW60C65D1, IDW40E65D1E |
25 V | 1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
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1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
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IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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Interleaved boost PFC |
22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
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24 V | 2-ch non-isolated |
2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
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25 V | 2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
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Totem pole PFC |
600 V | Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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High and Low Side |
2ED2110S06M | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM |
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High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
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Motor Inverter/ Compressor/ Drives/ Fans |
600 V | Half-Bridge | 2EDL05I06PF | 0.36/0.7 A |
Infineon SOI, integrated BSD |
IPD60R1K0PFD7S, IPN60R600PFD7S |
Half-Bridge | 2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
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Three-Phase |
6EDL04I06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting | |||
Three-Phase |
IRS2334M | 0.2/0.35 A |
Space saving QFN package, matched propagatin delay |
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Half-Bridge | IRS2890DS | 0.22/0.48 A |
Integrated bootstrap FET, OCP, fault reporting |
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650 V | High and Low Side |
2ED2106S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, HIN, LIN |
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Half-Bridge | 2ED2108S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, HIN, LIN |
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High and Low Side |
2ED21814S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD, separate VSS/COM |
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Half-Bridge | 2ED2182S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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Non-Motor Inverter |
25 V | 1-ch non-isolated |
1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
TRENCHSTOP™ IGBT Reverse Conducting IHW20N135R5, IHW60N65R |
650 V | Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD, separate VSS/COM |
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1200 V | 1-ch isolated |
1EDI20I12AF | 4/3.5 A |
EiceDRIVER™ 1ED Compact with separate output |
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25 V | 2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
CoolMOS™ MOSFET P7 |
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600 V | High and Low Side |
IRS2106S | 0.29/0.6 A |
Independent UVLOs |
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Half-Bridge | IRS2153DS | 0.18/0.26 A |
Self-oscillating, Integrated bootstrap FET, Shutdown |
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650 V | High and Low Side |
2ED2101S06F | 0.29/0.7 A |
Infineon SOI, integrated BSD, fast level-shift, HIN, LIN |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A | Infineon SOI, integrated BSD |
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Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
3-phase string inverter |
1200 V | 2-ch isolated |
2ED020I12-F2 | 2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
IMW120R030M1, IMW120R090M1H IDW20G1205B, IDW40G120C5B IKW40N120H3, IKW40N65ES5, IKW40N65H5 CoolSiC™ SiC Hybrid booster module DF80R12W2H3F_B11, DF160R12W2H3F_B11 CoolSiC™ SiC MOSFET booster module DF11MR12W1M1_B11, DF23MR12W1M1_B11 CoolSiC™ SiC MOSFET 2-Level module FF8MR12W2M1_B11, FS45MR12W1M1_B11 EasyPACK™ IGBT module |
2EDF6258X* |
4/8 A |
EiceDRIVER™ 2EDi with functional isolation |
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2EDF9275F | 4/8 A |
EiceDRIVER™ 2EDi with Functional isolation, Disable |
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2EDR8259H* |
4/8 A |
EiceDRIVER™ 2EDi with reinforced isolation |
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2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
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1-ch isolated |
1ED3241MC12H | 18/18 A |
EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
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1-ch isolated |
1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
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1-ch isolated |
1ED3491MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp |
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1-phase string inverter |
22 V | 2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
OptiMOS™ MOSFET BSC093N15NS5, IPB044N15N5, IPP051N15N5 CoolMOS™ MOSFET |
24 V | 2-ch non-isolated |
2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
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25 V | 1-ch non-isolated |
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
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2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
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1-ch non-isolated |
IRS44273L | 1.5/1.5 A |
Additional OUT pin |
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650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
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Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM |
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1200 V | 1-ch isolated |
1EDB9275F | 5.4/9.8 A |
EiceDRIVER™ 1EDi with basic isolation (3kV UL 1577) |
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1-ch isolated |
1EDI60N12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
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2-ch isolated |
2EDB9259Y* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
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2-ch isolated |
2EDB7259Y* |
5/9 A |
3kV basic isolation w. CT technology (UL1577), dead-time control (DTC) and STP, UVLO (4 types), CMTI > 150 V/ns |
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High and Low Side |
IR2213S | 2/2.5 A |
Shutdown and Separate power supply |
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Half-Bridge | IR2214SS | 2/3 A |
DESAT, soft-off, two stage turn on, fault reporting, Synchronization |
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2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
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Micro Inverter |
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
|
Half-Bridge | 2ED2748S01G* |
4/8 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
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200 V | High and Low Side |
IRS2011S | 1/1 A |
60 ns prop delay, VCC & VBS UVLO |
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600 V | Half-Bridge | 2EDL05N06PJ | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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650 V | Half-Bridge | 2ED21824S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN, separate VSS/COM |
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Half-Bridge | 2ED2304S06F | 0.36/0.7 A |
Infineon SOI, integrated BSD |
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1200 V | 2-ch isolated |
2EDS7165H | 1/2 A |
EiceDRIVER™ 2EDi with reinforced isolation |
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Power Optimizer |
200 V | 1-ch non-isolated |
1EDN8550B | 4/8 A | True differential inputs, with ± 80 V static ground-shift robustness |
|
High and Low Side |
IRS2011S | 1/1 A | 60 ns prop delay, VCC & VBS UVLO |
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250 V | High and Low Side |
2EDF5215F* | 5/9 A | 7 V UVLO, functional isolation and 37 ns propagation delay | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Motor Inverter/BLDC |
60 V | Three-Phase | 6EDL7141 | 1.5/1.5 A |
Fully programmable, integrated power supplies and current sense amplifiers |
|
160 V | High and Low Side |
2ED2732S01G* |
1/2 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
||
Three-Phase |
6ED2742S01Q* |
1/2 A |
Infineon SOI, integrated BSD, PMU, trickle charge pumps, programmable OCP, and current sense amp, RFE |
|||
Half-Bridge | 2ED2748S01G* |
4/8 A |
Infineon SOI, integrated BSD, separate VSS/COM, thermal pad |
|||
200 V | 1-ch non-isolated |
1EDN7550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
||
Three-Phase | 0.165/0.375 A |
Infineon SOI, OCP, Enable, fault reporting |
||||
Three-Phase | 6EDL04N02PR | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|||
High and Low Side |
IRS2005S | 0.29/0.6 A |
VCC & VBS UVLO, matched propagation delay |
|||
Half-Bridge | IRS2007S | 0.29/0.6 A |
VCC & VBS UVLO, matched propagation delay |
|||
High and Low Side |
IRS2011S | 1/1 A |
60 ns prop delay, VCC & VBS UVLO |
|||
600 V | Half-Bridge |
2EDL05N06PF | 0.36/0.7 A |
Infineon SOI, integrated BSD |
||
Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|||
Three-Phase | 6EDL04N06PT | 0.165/0.375 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|||
High and Low Side |
IRS21867S | 4/4 A |
High current for high power and fast switching frequency with low UVLO (6 V/5.5 V) |
|||
Battery Charger |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
CoolMOS™ MOSFET |
2-ch non-isolated |
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay | |||
25 V | 1-ch non-isolated
|
1ED44171N01B* |
2.6/2.6 A | Enable, programmable fault clear time, UVLO |
||
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||||
IRS44273L | 1.5/1.5 A | Additional OUT pin |
||||
600 V | High and Low Side |
IRS2186S | 4/4 A | High current for high power and fast switching frequency | ||
650 V | 2ED2106S06F | 0.29/0.7 A | Infineon SOI, integrated BSD, HIN, LIN | |||
2ED2110S06M | 2.5/2.5 A | Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | ||||
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM | ||||
Application | Driver Voltage class [V] | Configuration | Driver | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Single-end boost PFC |
22 V | 1-ch non-isolated |
1EDN7511B | 4/8 A |
Separate output, 19 ns propagation delay |
IPL60R065C7, IPZ60R017C7, IPZ60R099C7 |
25 V | 1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
|||
IRS44273L | 1.5/1.5 A |
Additional OUT pin |
||||
200 V | 1EDN8550B | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
|||
Totem pole PFC |
600 V | Half-Bridge | 2EDL23N06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
IPP60R070CFD7, IPT60R035CFD7, IPT60R145CFD7 |
650 V | High and Low Side |
2ED2181S06F | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, LIN |
||
1200 V | 1-ch isolated |
1EDF5673F | 4/8 A |
EiceDRIVER™ 1EDi with functional isolation for GaN HEMTs |
||
1200 V | 2-ch isolated |
2EDB8259F* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
||
Vienna rectifier |
22 V | 2-ch non-isolated |
2EDN7534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
IPP60R040C7, IPW60R017C7, IPB60R040C7 |
1200 V | 2-ch isolated
|
2EDB8259Y* |
4/8 A |
EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) |
||
1200 V | 2EDR8259H* |
4/8 A |
EiceDRIVER™ 2EDi with reinforced isolation |
|||
LLC/ZVS PSFB | 600 V | High and Low Side |
IRS2186S | 4/4 A |
High current for high power and fast switching frequency |
|
1200 V | 1-ch isolated |
4/8 A |
EiceDRIVER™ 1EDi with Reinforced isolation for GaN HEMTs, Disable |
|||
1200 V | 2-ch isolated |
2EDR8259X* |
5/9 A | EiceDRIVER™ 2EDi with reinforced isolation |
||
Sync rectifier |
22 V | 1-ch non-isolated |
1EDN7512G | 4/8 A |
Separate output, 19 ns propagation delay |
40 V OptiMOS™ 6 MOSFET BSC059N04LS6, ISC012N04LM6, IST007N04NM6 BSC016N06NS, ISC009N06LM5, BSZ040N06LS5 BSC019N08NS5, BSZ070N08LS5, IPT010N08NM5 |
2-ch non-isolated
|
2EDN7534G | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
|||
24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
|||
25 V | 1-ch non-isolated |
1ED44173N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||
120 V | High and Low Side |
2EDL8024G | 4/6 A |
<6ns delay matching, VDD/VHB UVLO |
||
Half-Bridge | 2EDL8124G3C* |
4/6 A | <6ns delay matching, VDD/VHB UVLO |
|||
200 | 1-ch non-isolated |
1EDN7116G* |
2/2 A |
GaN driver with truly differential input & adjustable negative charge pump |
||
1EDN7116U* |
2/2 A |
GaN driver with truly differential input |
||||
1EDN7550U | 4/8 A |
True differential inputs, with ± 80 V static ground-shift robustness |
||||
2-ch non-isolated |
1/4 A |
Dual synchronous rectification control IC |
||||
1200 V | 2-ch isolated |
2EDB8259F* | 5/9 A | EiceDRIVER™ 2EDi with basic isolation (3kV UL1577) | ||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon
Battery DC-DC |
600 V | Half-Bridge | 2EDL05I06PJ | 0.36/0.7 A |
Infineon SOI, integrated BSD |
|
2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
||||
650 V | High and Low Side |
2ED2110S06M | 2.5/2.5 A |
Infineon SOI, integrated BSD, fast level-shift, Shutdown, separate VSS/COM |
||
High and Low Side |
2ED2181S06F | 2.5/2.5 A | Infineon SOI, integrated BSD,HIN, LIN |
|||
1200 V
|
1-ch isolated |
1EDI20I12AF | 4/3.5 A |
EiceDRIVER™ 1ED Compact with separate output |
||
High and Low Side |
IR2213S | 2/2.5 A |
Shutdown and Separate power supply |
|||
Battery DC-DC |
1-ch isolated |
1EDI60I12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
||
Mains inverter |
600 V | Half-Bridge
|
2EDL23I06PJ | 2.3/2.8 A |
Infineon SOI, integrated BSD, OCP, Enable, fault reporting |
|
IR2114SS | 2/3 A |
DESAT, soft-off, two stage turn on, fault reporting, Synchronization |
||||
High and Low Side |
IRS2186S | 4/4 A |
High current for high power and fast switching frequency |
|||
650 V | Half-Bridge |
2ED21834S06J | 2.5/2.5 A |
Infineon SOI, integrated BSD,HIN, /LIN, separate VSS/COM |
||
1200 V | 1-ch isolated |
1EDI20I12MF | 4.4/4.1 A |
EiceDRIVER™ 1ED Compact with Miller clamp |
||
1EDI60I12AF | 10/9.4 A |
EiceDRIVER™ 1ED Compact with separate output |
||||
2-ch isolated |
2ED020I12-F2 | 2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
EasyPACK™ 3-level NPC 1 module FS3L30R07W2H3F_B11, FS3L50R07W2H3F_B11 EasyPACK™ 3-level NPC 2 module F3L75R12W1H3_B11, F3L150R12W2H3_B11 CoolSiC™ MOSFET 3-level NPC 2 module
FS50R12KT4_B11, FS150R12PT4 |
||
2300 V | 1-ch isolated |
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
||
1ED3241MC12H | 18/18 A |
EiceDRIVER™ 2L-SRC Compact with 2-level slew rate control |
||||
1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
||||
1ED3491MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Analog with programmable DESAT, soft-off and Miller clamp |
||||
1ED3890MC12M | 7.5/11 A |
EiceDRIVER™ Enhanced X3 Digital with I2C configurability, DESAT, soft-off and Miller clamp |
||||
PFC/SMPS |
22 V | 1-ch non-isolated |
1EDN8511B | 4/8 A |
Separate output, 19 ns propagation delay |
|
2-ch non-isolated
|
2EDN8534F | 5/5 A |
2 ns delay matching, 19 ns propagation delay |
|||
24 V | 2ED24427N01F | 10/10 A |
Enable, Low RDSON outputs, thermal pad |
|||
25 V | 1-ch non-isolated |
1ED44171N01B* |
2.6/2.6 A |
Enable, programmable fault clear time, UVLO |
||
1ED44175N01B | 2.6/2.6 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, negative current sensing |
||||
1ED44176N01F | 0.8/1.75 A |
Fast, accurate (±5%) OCP, fault reporting, Enable, positive current sensing, separate VSS / COM |
||||
2-ch non-isolated |
IRS4427S | 2.3/3.3 A |
Matched propagation delay |
|||
1-ch non-isolated |
IRS44273L | 1.5/1.5 A |
Additional OUT pin |
|||
Active Bridge Rectifier |
1200 V | 2-ch isolated |
2/2 A |
EiceDRIVER™ Enhanced 2ED-F2 with DESAT and Miller clamp |
IMW120R030M1, IMW120R090M1H CoolSiC™ MOSFET 3-level NPC 2 module |
|
2300 V | 1-ch isolated
|
1ED3124MC12H | 13.5/14 A |
EiceDRIVER™ X3 Compact with separate output |
||
2300 V | 1ED3321MC12N | 6/8.5 A |
EiceDRIVER™ Enhanced 1ED-F3 with DESAT, soft-off and Miller clamp |
|||
Application | Driver Voltage class [V] | Configuration | Part number | Output current [A] | Features | Suitable power switches and modules |
*Coming soon

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.