Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique, measurable and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
Now including the new 2ED218x - high current 650 V, 2.5 A, half-bridge SOI gate driver family, and new 2ED210x - low current 650 V, 0.7 A, half-bridge SOI gate driver family. Both product families include two package options of DSO-8 and DSO-14.