三相驱动芯片
三相栅极驱动芯片，用于驱动功率器件，如MOSFET或IGBT
我们的栅极驱动芯片解决方案堪称行家之选。我们提供三相栅极驱动芯片，六个通道在一个封装里，拥有三个独立的半桥。我们还提供采用先进 英飞凌绝缘体上硅 (SOI)技术的三相栅极驱动芯片。这些栅极驱动器的强度和抗扰度极佳，非常适用于电机驱动、家用电器和电池供电的应用。
通过汽车认证的三相栅极驱动芯片也供您选用。
选择一项产品亮点了解详细信息
典型三相驱动芯片的应用接线图
英飞凌和国际整流器公司（IR）数十年的专业应用知识和技术发展催生了一系列栅极驱动器IC, 适用于硅和宽带隙功率器件，例如MOSFET、分立式IGBT、IGBT模块、SiC MOSFET以及GaN HEMT。我们提供电气隔离栅极驱动器、通过汽车应用认证的栅极驱动器，200V、500-700V、1200V电平转换栅极驱动器以及非隔离低边驱动器等产品系列。
我们的产品组合涵盖各种配置、电压等级、隔离级别、保护功能和封装选项。先进的分立式开关系列需要对栅极驱动电路进行调谐，以充分利用其容量和能力。无论是驱动分立器件还是功率模块，优化的栅极驱动配置对于所有功率开关而言都是必不可少的。
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You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
