IRS2117

综述

600 V single high-side gate driver IC with single input

600 V 高边驱动器 IC,具有典型的 0.29 A 拉电流和 0.6 A 灌电流，采用 8 引脚 PDIP 封装，适用于 IGBT 和 MOSFET。也有 8 引脚 SOIC 封装可选。

特征描述:

 

  • 专为自举操作设计的浮动栅极驱动器
  • 完全运行时的电压高达 600V
  • 容许负瞬态电压，不受 dV/dt 影响
  • 栅极驱动电源范围：10 V 至 20V
  • 双通道欠压锁定
  • 具有下拉的 CMOS 施密特触发输入
  • 输出与输入同相 (IRS2117 和 IRS21171 )
  • 输出与输入不同相 (IRS2118)

目标应用:

图表
软件和工具
视频
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

2:41

Advantages of Infineon SOI Gate Driver Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

8:30

2EDL半桥驱动芯片

EiceDRIVER™ 2EDL是基于绝缘体上硅技术的600伏半桥门级驱动芯片系列, 其内部集成高性能低阻快恢复自举二极管, 适用于需高效率和小体积的各种应用.

培训
58:35

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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