高边驱动芯片
单通道和双通道高边栅极驱动器IC，可用于控制MOSFET和IGBT
EiceDRIVERTM高边栅极驱动器IC包括隔离式栅极驱动器、电平转换栅极驱动器（可选）以及非隔离式栅极驱动器系列（得益于其真差分控制输入，可作为高边驱动器使用）。我们提供单通道和双通道电气隔离栅极驱动器IC，其中部分产品具有退饱和（DESAT）和有源米勒钳位等保护功能，也有部分产品获得了UL和VDE认证。为对OptiMOS™功率MOSFET、CoolMOS™超结MOSFET、 CoolSiC™ MOSFET和CoolGaN™ HEMT实现理想驱动，它们具有多个欠压锁定（UVLO）阈值选项。
同时，单通道电平转换高边栅极驱动器IC还具有过流保护功能，特别适用于降压拓扑结构。通过汽车应用认证的高边栅极驱动器IC也在其中。当高边电压不超过100V时，该非隔离式真差分输入（TDI）栅极驱动器系列便是有吸引力的选择，比如某些升降压电路、由电池驱动的电机驱动应用以及半桥或全桥同步整流单元。
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英飞凌和国际整流器公司（IR）数十年的专业应用知识和技术发展催生了一系列栅极驱动器IC, 适用于硅和宽带隙功率器件，例如MOSFET、分立式IGBT、IGBT模块、SiC MOSFET以及GaN HEMT。我们提供电气隔离栅极驱动器、通过汽车应用认证的栅极驱动器，200V、500-700V、1200V电平转换栅极驱动器以及非隔离低边驱动器等产品系列。
我们的产品组合涵盖各种配置、电压等级、隔离级别、保护功能和封装选项。先进的分立式开关系列需要对栅极驱动电路进行调谐，以充分利用其容量和能力。无论是驱动分立器件还是功率模块，优化的栅极驱动配置对于所有功率开关而言都是必不可少的。
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通过该培训，您将了解如何计算驱动不同IGBT所需的栅极电阻值，如何根据峰值电流和功耗需求确定合适的栅极驱动芯片，以及如何在实验室中，根据实际应用环境的最坏情况对栅极电阻值进行微调。
- EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.
