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EiceDRIVER™ high-side gate-driver ICs include isolated gate drivers, level-shift gate driver options and a non-isolated gate driver family which, thanks to its truly differential control inputs, can be used as a high-side driver. We provide one-channel and two-channel galvanically isolated-gate driver ICs, some include advanced protection features like DESAT and active Miller clamp and some carry UL and VDE certification. Multiple UVLO threshold options are offered to best fit the driving of OptiMOS™ power MOSFETs, CoolMOS™ superjunction MOSFETs, CoolSiC™ MOSFETs and CoolGaN™ HEMTs.

We also provide one-channel level-shift high-side gate-driver ICs with over-current protection, perfect for buck topology. Automotive qualified high-side gate-driver ICs are included as well. The non-isolated TDI gate-driver family can be an attractive choice where high-side voltages reach not more than 100V, as is the case in some buck-boost circuitries, battery-powered motor drive applications and half-bridge or full-bridge synchronous rectification units.

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.

Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.