Single channel and dual channel high side gate driver ICs to control MOSFETs and IGBTs
EiceDRIVER™ high side gate driver ICs include isolated gate drivers and level shift gate drivers option. We provide one channel and two channel galvanic isolated gate driver ICs with advanced protection features like DESAT and active Miller clamp. These gate drivers are UL and VDE certification, perfect for driving SiC MOSFETs and GaN HEMTs.
We also provide one channel level shift high side gate driver ICs with over current protection, perfect for buck topology. We also offer automotive qualified high side gate driver ICs.
Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers.
Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.