半桥驱动芯片
半桥栅极驱动器IC 提供击穿保护功能，用于控制 MOSFET 和 IGBT
英飞凌栅极驱动器 IC 解决方案堪称行家之选。我们提供具有两个互锁通道的半桥栅极驱动器。
最新推出新型 650 V半桥 绝缘体上硅(SOI)栅极驱动器IC，具有高电流(2.5 A)和低电流(0.7 A)两个选项。这些栅极驱动器的强度和抗扰度极佳，非常适用于电机驱动、家用电器、SMPS、电池供电应用和大功率照明。
我们还提供通过汽车认证的半桥栅极驱动器IC 。
选择我们的产品系列，了解详细信息
典型半桥栅极驱动器连接图解
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You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
IRS2890DS：600 V半桥栅极驱动芯片的培训课程。介绍栅极驱动芯片的关键特性和优势，此芯片具有过流保护功能。介绍如何在不同的终端应用中使用该芯片，以及IRS2890DS在英飞凌栅极驱动产品系列中的定位。
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
