MOSFET 驱动芯片
用于高压和低压MOSFET的行业领先的栅极驱动器IC
EiceDRIVER™ 栅极驱动器系列包含：隔离型栅极驱动器IC 、电平转换栅极驱动器IC，以及低边栅极驱动器 IC，这些产品经过优化适用于各类应用中的高压和低压MOSFET。栅极驱动器IC可提供不同的配置，具有多种功能特性：为MOSFET提供低欠压锁定 (UVLO) 选项(5 V)、低传播延迟、通过绝缘体上硅(SOI)技术实现的驱动内部集成自举二极管、高驱动电流以及过电流保护。在驱动MOSFET时这些功能非常重要，特别是对于 PFC、开关电源 (SMPS)、电池供电应用、计算机、电机控制和驱动装置、照明和太阳能微逆变器等应用而言，其重要性更为突出。
我们还提供通过汽车认证的栅极驱动器IC。汽车应用效率提高的趋势也与电机密切相关。在未来，助力转向、暖通空调 (HVAC) 压缩机和发动机冷却风扇等应用将由电机控制。可配置的， H桥和三相汽车栅极驱动器IC 可与汽车 MOSFET 相结合，提供这些系统汽车所需的功率和效率。
每个功率器件都需要一个驱动芯片——合适的驱动芯片让您事半功倍。立即下载英飞凌最新的栅极驱动器选择指南2019。
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This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
