隔离型栅极驱动器芯片
耐用、强大、精准的单通道和双通道隔离栅极驱动器 IC, 适用于MOSFET、IGBT、IGBT模块、碳化硅(SiC) MOSFET以及氮化镓(GaN) HEMT
EiceDRIVER™ 电气隔离栅极驱动器采用电磁耦合无铁芯变压器( CT )技术来保证电气隔离时的信号传输。我们提供功能绝缘、基本绝缘和加强绝缘的隔离型产品,这些产品通过 UL 1577和VDE 0884认证。隔离层允许大电压振幅(如:±1200 V)。
我们的隔离栅极驱动器具有适用于MOSFET、IGBT、 IGBT 模块、SiC MOSFET 以及GaN HEMT 的非常重要的关键特性和参数。EiceDRIVER™ 系列有符合工业和汽车认证的产品。
基于功率器件和应用的种类,EiceDRIVER™ 电气隔离栅极驱动器可提供短路保护、精确的输入滤波器、100 kV /μs的共模瞬变抗扰度(CMTI)、有源米勒钳位、退饱和 (DESAT) 保护、较宽输出侧电源范围、负栅极电压能力、软关断、两电平关断和强大的耐用性。电气隔离栅极驱动器也可提供高达10 A的强大栅极驱动电流,实现出色的电源开关效率。
选择一个产品系列,了解详细信息
输入端到输出端之间的隔离,以及双通道隔离栅极驱动器输出通道之间的隔离,对于硬开关半桥配置而言非常重要。而输入端与输出端之间的加强绝缘,则对电气安全而言十分关键。
无论是从生产偏差还是从温度范围的角度来说,英飞凌业内先进的精准时间特性都能够实现更高水平的功率转换系统效率。
极短的传播延迟使设计者保持了较高水平的灵活性,同时也令电路易于使用,功能易于处理。我们的产品在恶劣的 EMC 环境中运行稳定,输出端高达10 A的电流能力,可以驱动高达300 A / 1200 V的 IGBT。
| 主要优势 | 关键特性 | 应用 |
|---|---|---|
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Certificates
| Part Numbers | UL 1577 (Vrms) | VED0884-11 Reinforced |
EN 60950-1* |
EN 62368-1 | EN 61010-1 | GB4943.1 | |||||
| 2250 | 2500 | 3000 | 5700 | Basic | Reinforced | Basic | Reinforced | ||||
| 2EDS8165H | √ | √ | √ | √ | √ | ||||||
| 2EDS8265H | √ | √ | √ | √ | √ | ||||||
| 2EDS9265H | |||||||||||
| 2EDF7275F | |||||||||||
| 2EDF7175F | |||||||||||
| 2EDF9275F | |||||||||||
| 2EDF7275K | |||||||||||
| 2EDF7235K | |||||||||||
| 2EDR8259H | √ | √ | √ | √ | |||||||
| 2EDR7259X | √ | √ | √ | √ | |||||||
| 2EDR8259X | √ | √ | √ | √ | |||||||
| 2EDR9259X | √ | √ | √ | √ | |||||||
| 2EDB8259F | √ | ||||||||||
| 2EDB7259Y | √ | ||||||||||
| 2EDB8259Y | √ | ||||||||||
| 2EDB8259Y | √ | ||||||||||
| 2EDB7259K | √ | √ | √ | ||||||||
| 2EDB8259K | √ | √ | √ | ||||||||
| 2EDB7259A | √ | √ | √ | ||||||||
| 2EDB8259A | √ | √ | √ | ||||||||
| Part Numbers | UL 1577 (Vrms) | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | |
| 1ED020I12-B2 | √ | |||||
| 1ED020I12-BT | √ | |||||
| 1EDC05I12AH | √ | |||||
| 1EDC10I12MH | √ | |||||
| 1EDC20H12AH | √ | |||||
| 1EDC20I12AH | √ | |||||
| 1EDC20I12MH | √ | |||||
| 1EDC30I12MH | √ | |||||
| 1EDC40I12AH | √ | |||||
| 1EDC60H12AH | √ | |||||
| 1EDC60I12AH | √ | |||||
| 1EDI20I12SV | ||||||
| 1EDS20I12SV | √ | |||||
| 1EDU20I12SV | √ | |||||
| Part Number | UL 1577 (Vrms) | VDE0884-11 | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | Reinforced | |
| 1ED3120MC12H | √ | √ | |||||
| 1ED3121MC12H | √ | √ | |||||
| 1ED3122MC12H | √ | √ | |||||
| 1ED3123MC12H | √ | √ | |||||
| 1ED3124MC12H | √ | √ | |||||
| 1ED3131MC12H | √ | √ | |||||
| 1ED3431MC12M | √ | √ | |||||
| 1ED3461MC12M | √ | √ | |||||
| 1ED3491MC12M | √ | √ | |||||
| 1ED3830MC12M | √ | √ | |||||
| 1ED3860MC12M | √ | √ | |||||
| 1ED3890MC12M | √ | √ | |||||
| 1ED3120MU12H | √ | ||||||
| 1ED3121MU12H | √ | ||||||
| 1ED3122MU12H | √ | ||||||
| 1ED3123MU12H | √ | ||||||
| 1ED3124MU12H | √ | ||||||
| 1ED3131MU12H | √ | ||||||
| 1ED3431MU12M | √ | ||||||
| 1ED3461MU12M | √ | ||||||
| 1ED3491MU12M | √ | ||||||
| 1ED3830MU12M | √ | ||||||
| 1ED3860MU12M | √ | ||||||
| 1ED3890MU12M | √ | ||||||
| 1ED3124MU12F | √ | ||||||
| 1ED3125MU12F | √ | ||||||
| 1ED3240MC12H | √ | √ | |||||
| 1ED3241MC12H | √ | √ | |||||
| 1ED3250MC12H | √ | √ | |||||
| 1ED3251MC12H | √ | √ | |||||
| 1ED3320MC12N | √ | √ | |||||
| 1ED3321MC12N | √ | √ | |||||
| 1ED3322MC12N | √ | √ | |||||
| 1ED3323MC12N | √ | √ | |||||
| 1ED3140MU12F | √ | ||||||
| 1ED3141MU12F | √ | ||||||
| 1ED3142MU12F | √ | ||||||
| 1ED3126MU12F | √ | ||||||
| 1ED3127MU12F | √ | ||||||
| 1ED3126MC12H | √ | √ | |||||
| 1ED3127MC12H | √ | √ | |||||
| 1ED3128MC12H | √ | √ | |||||
| 1ED3129MC12H | √ | √ | |||||
Part Numbers |
UL 1577 (Vrms) | VDE0884-11 Reinforced | |||||
| 2250 | 2500 | 3000 | 3750 | 5000 | 5700 | ||
| 1ED020I12FA2 | √ | ||||||
| 2ED020I12FA | √ | ||||||
| 1ED020I12FTA | √ | ||||||
| 1EDI2001AS | √ | ||||||
| 1EDI2002AS | √ | ||||||
| 1EDI2010AS | √ | ||||||
| 1EDI2003AS | √ | ||||||
| 1EDI2004AS | √ | ||||||
| 1EDI3020AS | √ | √ (pending) | |||||
| 1EDI3021AS | √ | √ (pending) | |||||
| 1EDI3023AS | √ | √ (pending) | |||||
| 1EDI3030AS | √ | √ (pending) | |||||
| 1EDI3031AS | √ | √ (pending) | |||||
| 1EDI3033AS | √ | √ (pending) | |||||
| 1EDI3050AS | √ | √ (planned) | |||||
| 1EDI3051AS | √ | √ (planned) | |||||
| 1EDI3025AS | √ | √ (planned) | |||||
| 1EDI3035AS | √ | √ (planned) | |||||
| 1EDI3040AS | √ | √ (planned) | |||||
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- Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
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2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution
Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.
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- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS
- The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Learn how Infineon’s EiceDRIVER™ galvanically-isolated gate driver ICs enable best-in-class efficiency while reducing the total system cost.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
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- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.


