EiceDRIVER™ 1ED 紧凑型栅极驱动器 IC

综述

Easy-to-design-in up to 5.7 kV (rms), 14 A galvanically isolated single channel gate driver family with separate output or Miller clamp function in DSO-8 150 mil and 300 mil package

The EiceDRIVER™ isolated gate drivers consist of a Compact series and an Enhanced series. The Compact series comprises of two families:

The 1ED Compact family in DSO-8 150 mil narrow body package with functional isolation (9 variants).

  • The 1ED-AF products offer up to 10 A output current capability, with separate output.
  • The 1ED-MF products offer up to 6 A output current capability, with active Miller Clamp.

The new X3 Compact family (1ED31xx) in DSO-8 150 mil narrow body and 300 mil wide body package (8-mm creepage), fulfilling the highest isolation standards (14 variants).

  • The 1ED31xxMx12H products offer up to 14 A output current capability, with separate output or Miller clamp, in DSO-8 300 mil package with UL 1577 certification VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certification (reinforced isolation) VIORM = 1767 V
  • The 1ED31xxMU12F products offer up to 14 A output current capability, with separate output or Miller clamp, in DSO-8 150 mil package with UL 1577 certification VISO = 3 kV (rms) for 1 mil

 

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Gate driver ICs in 150 mil and 300 mil package

The 1ED Compact family come in 9 variants each in 3 sub-families:

  • The 1EDx05I12AH/AF, 1EDx20I12AH/AF, 1EDx40I12AH/AF, and 1EDx60I12AH/AF provide gate driver strength from 0.9 A to 10 A on separate source/sink output pins and a typical propagation delay of 300 ns.
  • The 1EDx20H(N)12AH/AF and 1EDx60H(N)12AH/AF are ideal for high-speed IGBT and SiC MOSFET applications with a reduced propagation delay of just 120 ns.
  • With an integrated active Miller clamp, the 1EDx10I12MH, 1EDx20I12MH, and 1EDx30I12MH deliver output current from 1.7 A to 5.2 A; 1EDI10I12MF, 1EDI20I12MF, and 1EDI30I12MF deliver output current from 2.2 A to 6.2 A.
  • The 1EDC family is recognized under UL 1577 with an insulation test voltage of VISO = 2500 V(rms) for 1 min
  • The optimized pin out simplifies the PCB design for low impedance power supply.
  • All drivers are offered in a halogen-free and RoHS compliant wide-body package with a creepage distance of 8 mm.

Product Features

All products are available in DSO-8 150 mil and 300 mil package. By combining EiceDRIVER™ with super-junction MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC)  MOSFET such as CoolSiC™, and IGBT modules, Infineon enables customers to achieve their design goals.

Features Applications
  • Single channel high-voltage gate driver IC
  • 1200 V input-to-output isolation voltage
  • Provide DSO-8 300 mil wide body package with 8 mm creepage distance
  • For 600 V/650 V/1200 V IGBT, MOSFET and SiC MOSFET devices and modules
  • Up to 10 A typical peak rail-to-rail output
  • Suitable for operation at high ambient temperature
  • Separate source and sink outputs or active Miller clamp
  • More than 100 kV/μs CMTI
  • Optimized pin out for low inductance power supply
  • No need to adapt signal voltage levels between μController and driver
  • Short circuit clamping
  • Active shutdown

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Recommended documents

视频

Introduction to gate drivers

Become familiar with our product portfolio.

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

培训
  • The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

Watch now

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

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