6ED2230S12T

综述

描述:

1200-V three-phase SOI gate driver with integrated bootstrap diode and over-current protection with typical 0.35 A source and 0.65 A sink currents in DSO-24 package (DSO-28 with 4 pin removed) for driving IGBTs.

特征描述:

  • 1200-V Infineon Thin-Film-SOI technology
  • Integrated Ultra-fast Bootstrap Diode
  • Tolerant to negative transient voltage up to -50 V (Pulse width is up 500 ns) given by SOI-technology
  • Output source/sink current capability +0.35 A/-0.65 A
  • Over current protection (ITRIP +/- 5% reference)
  • Integrated 460 ns dead-time protection
  • Shoot-through (cross-conduction) protection
  • Integrated input filter for noise immunity
  • Independent Under-voltage lockout for VCC and VBS
  • Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
  • Matched propagation delay for all channels
  • 3.3 V, 5 V, and 15 V input logic compatible
  • DSO-24 package (DSO-28 with 4 pins removed for high clearance)

目标应用:

aircondrivesMarine     

图表
视频
7:03

An Introduction to Infineon Gate Drivers

www.infineon.com/gatedriver

Do you want to know more about Infineon´s Gate Drivers? Watch our introduction video and become familiar with our product portfolio.

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