2EDR3140XQE | 5.7 kV (rms) dual-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 8.5 V UVLO

综述

EiceDRIVER™ Compact 2300 V dual-channel isolated gate driver with +/-6.5 A typical peak output current in a 14-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100.

Offers dead-time control (DTC) and independent channel operation, allowing for operation as a dual-channel low-side driver, a dual-channel high-side driver, or a half-bridge gate driver with a configurable dead-time.

特征描述

For up to 2300 V Switches
2300 V input-output functional isolation
Galvanically isolated coreless xformer
35 V abs. max. output supply voltage
Up to 17 V input supply voltage
39ns typ propogation delay
8.5 V / 9.3 V UVLO protection
CTI 600 Package with 8mm creepage
Disable pin Switches outputs off
Product validation according to AEC-Q100

优势

Strong 6.5 A output stage
Best-in-class CMTI of > 200 kV/µs
8 mm input-to-output
3.3 mm ch-to-ch
Part-to-part prop delay skew+ of 8 ns max
Ch-to-ch prop delay skew of 5ns max
IEC 60747-17 (planned), UL 1577
VIORM = 1767 V (peak, reinforced)
VISO = 5.7 kV (rms) for 1 min
UVLO options for GaN, Si, IGBT, SiC
Pin-to-pin package option

Find our Variations for EiceDRIVER™ compact 2EDR314xXQE family

Part No	Typical UVLO	Typical Output	Functionality
2EDR3140XQE	9.3 V / 8.5 V	6 A / 6.5 A	DISABLE
2EDR3142XQE	5.2 V / 4.8 V	6 A / 6.5 A	ENABLE
2EDR3144XQE	9.3 V / 8.5 V	6 A / 6.5 A	ENABLE
2EDR3146XQE	13 V / 12 V	6 A / 6.5 A	ENABLE
2EDR3147XQE	16 V / 14.75 V	6 A / 6.5 A	ENABLE
2EDR3148XQE	18.1 V / 16.7 V	6 A / 6.5 A	ENABLE
2EDR3149XQE	20.5 V / 18.9 V	6 A / 6.5 A	ENABLE