2ED3142MC12L 6.5 A , 5.7 kV (rms) 双通道隔离型栅极驱动器,具有死区时间控制和12.5 V欠压锁定功能,并通过UL 1577认证
EiceDRIVER™ Compact双通道隔离型栅极驱动器,拥有6.5 A 灌峰值输出电流和6 A拉峰值输出电流,采用14引脚DSO宽体封装,适用于驱动IGBT、MOSFET和SiC MOSFET。
它具有死区时间控制(DTC)功能,并支持每个通道独立运行。这使得它可被用作双通道低侧驱动器、双通道高侧驱动器或半桥栅极驱动器,且死区时间可配置。
特征描述
- 适用于驱动600 V/650 V/1200 V/1700 V/2300 V IGBT、Si和SiC MOSFET
- 对于特定应用,能够支持2300 V功能偏置电压
- 电气隔离无磁芯变压器栅极驱动器
- 最高 6.5 A 典型峰值输出电流
- 39 ns传输延迟
- 35 V绝对最高输出电源电压
- 高共模瞬变抗扰度:CMTI > 200 kV/µs
- 主动关断和短路钳位
- 3.3 V和5 V输入电源电压
- 禁用引脚,关闭输出
- 具有迟滞功能的12.5 V/ 13.6 V欠压锁定(UVLO)保护
优势
- 输入输出之间的爬电距离:8 mm,通道之间的爬电距离:3.3 mm
- 严格控制IC之间的传输延迟偏差:最大8 ns
- 严格控制通道之间的传输延迟偏差:最大5 ns
- 双通道配置帮助减小产品尺寸
- 死区时间控制
- UL 1577认证:VISO = 6.84 kV (rms),持续1 s;VISO = 5.7 kV (rms),持续1 min
- IEC 60747-17认证(计划):VIORM = 1767 V(峰值,加强绝缘)
Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!
Isolated gate drivers are electronic devices designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™ X3 Compact 1ED314x family (single-channel) and 2ED314x family (dual-channel) galvanically isolated gate drivers and share its features, benefits, and the application positioning.