1EDS5663H

综述

GaN EiceDRIVER™IC具有出色的稳健性和效能，非常适合驱动GaN HEMT

新型单通道电隔离栅极驱动器IC组件1EDS5663H非常适合增强型GaN HEMT。 它具有非隔离栅极（二极管输入特性）和低阈值电压， 例如CoolGaN™。 它可确保稳健高效的高压GaN开关操作，同时大大减少研发工作并缩短产品上市时间。

好处

正负栅极驱动电流:
 快速导通/关断GaN开关转换速度

在断相期间，将栅极电压保持在零位:
  避免GaN开关误导通
  减少高达50%的死区时间损失

可配置且恒定的GaN开关转换速率， 跨越宽范围的开关频率和占空比:
  稳健且高效的SMPS设计
  缩短产品上市时间

集成电隔离:
  硬开关应用中的稳健操作
  可以达到加强（安全）隔离标准

特点

低输出电阻:
  输出: 0.85Ω
  下沉: 0.35Ω

单通道电流隔离:
  加强隔离: VIOTM = 8000Vpk (VDE 0884-10审核中)
                        VIOWM = 1420 VDC
  CMTI最小值:   200V/ns 

定时:
  最小输出脉冲宽度: 18ns
  传播延迟精度: 13ns

关键用例

  • 图腾柱PFC
  • 维也纳整流器
  • 多层次拓扑
  • 谐振LLC

 

 

目标应用

视频

Introducing gallium nitride CoolGaN™ e-mode HEMTs

CoolGaN™ the new power paradigm. Ultimate efficiency and reliability. This is what Infineon’s gallium nitride CoolGaN™ e-mode HEMTs offer to you

Get the know-how of driving gallium nitride CoolGaN™ e-mode HEMTs from an expert!

Hubert Baierl, Senior Product Marketing, introduces Infineon's dedicated single-channel isolated GaN EiceDRIVER™ family.

Learn more

Driver ICs for GaN HEMTs


GaN devices have an ultra low turn-on threshold and to properly drive them it is important that there is a negative gate voltage provided when the HEMT is intended to turn-off. In that way, it is fast turned off. Secondly, this gate drivers can hold the gate voltage firmly at zero when the HEMT is intendeded to turned-off. No spurios turn-on of the HEMTs.

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