EiceDRIVER™ 1200 V high-side gate driver IC with typical 1.3 A source and 0.9 A sink currents in DSO-8 package with UL certified galvanic isolation, active Miller clamp and short circuit clamping for IGBT Modules. Recognized under UL 1577 with an insulation test voltage of VISO = 3000 V for 1 s
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Galvanic isolated Gate Drivers with Protection Features
EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.
How to choose gate driver for SiC MOSFETs and SiC MOSFET modules
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.