1ED3143MC12H 5.7 kV单通道栅极驱动器IC：具备加强型绝缘、6.5 A 输出电流、参考GND2的UVLO、11 V UVLO

综述

EiceDRIVER™紧凑型单通道隔离栅极驱动器，具备6.5 A灌电流和6 A拉电流的峰值输出能力，采用8引脚宽体LDSO封装，适用于 IGBT、MOSFET和SiC MOSFET。

特征描述

  • 支持高达2300 V的IGBT、硅（Si）和碳化硅（SiC）开关
  • 功能偏置电压：2300 V
  • 采用电气隔离的无芯变压器技术
  • 典型峰值输出电流：高达6.5 A
  • 传播延迟：40 ns
  • 绝对最大输出电源电压：35 V
  • 高共模瞬变抗扰度（CMTI）：> 300 kV/µs
  • 支持主动关断和短路钳位功能
  • 输入电源电压：3.3 V和5 V
  • 11/12 V UVLO 保护，具有滞后特性
  • 欠压锁定（UVLO）保护功能，以GND2为参考基准

优势

  • 输入端与输出端之间的爬电距离和间隙距离为8 mm
  • 器件间传播延迟偏差：最大7 ns
  • 封装的漏电起痕电压（CTI）：600
  • 过温保护功能
  • 符合IEC 60747-17（计划认证）与UL 1577
  • VIORM = 1767 V（峰值，加强型绝缘）
  • 绝缘测试电压Viso = 6.84 kV(rms)，持续时间1秒
  • VISO = 5.7 kV（有效值），持续一分钟

Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.

Learn more about the transformer driver ICs

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培训

How to make gate driver designs simple

Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!

Isolated gate drivers designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™​ X3 Compact 1ED314x family (single-channel) as well as the 2ED314x family (dual-channel) galvanically isolated gate drivers.

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