IGOT60R042D1

综述

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGOT65R035D2.

The IGOT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server, telecom, renewables, and numerous other applications.

 

特征描述

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Top-side cooled

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

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