IGI60L5050A1M
综述
The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaNTM GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power applications.
特征描述
- Integrated driver with bootstrap diode
- Application configurable switching behavior
- Low profile TFLGA 6x8 package
优势
- Low system BOM
- Configurability of gate path with low inductance loop on PCB for optimizing of motor control
- Allows short dead-time for maximum system efficiency
- Small package for compact system design by integration of bootstrap diode
潜在应用
- Low power motor drive
- LED lighting
支持